Surface acoustic wave propagation on lead zirconate titanate thin films

Sreenivas, K.; Sayer, M.; Baar, D.J.; Nishioka, Michihiro

doi:10.1063/1.99354

Cited by 97 publications

(21 citation statements)

References 5 publications

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“…PZT films have been widely used in ferroelectric random access memory (FRAM) [5], surface acoustic wave (SAW) devices [6] and infrared detectors. Because of the existence of a low temperature rhombohedral (F R(LT) )-high temperature rhombohedral (F R(HT) ) ferroelectric phase transition in the Zr-rich (Zr > 90 mol%) lead zirconate titanate, when the F R(LT) -F R(HT) phase transition is induced by temperature, a nonlinear change of spontaneous polarization occurs, and a large pyroelectric coefficient (p) is obtained.…”

Section: Introductionmentioning

confidence: 99%

Investigation on preparation and properties of Pb(Zr0.95Ti0.05)O3 thin films

Zeng

Dong

et al. 2011

Infrared Physics & Technology

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Section: Introductionmentioning

confidence: 99%

Investigation on preparation and properties of Pb(Zr0.95Ti0.05)O3 thin films

Zeng

Dong

et al. 2011

Infrared Physics & Technology

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“…Ferroelectric thin films can be prepared by a number of different deposition methods [5][6][7][8][9][10][11][12]. The sol-gel method is preferred for many applications because it offers both compositional control and reduced-temperature processing of highly uniform, dense, crack-free films.…”

Section: Introductionmentioning

confidence: 99%

The investigation of key processing parameters in fabrication of Pb(Zr x Ti1−x )O3 thick films for MEMS applications

2007

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It has always been a big challenge to deposit dense and crack-free Pb(Zr x Ti 1−x )O 3 (PZT) thick films through Chemical Solution Deposition (CSD). In this study, a sol with higher concentration (≥0.6 M) was spun onto a platinised silicon substrate. The single layer thickness of a dense, crack-free film with several tenths of nanometres up to 350 nm could be obtained. It was found that the key factor in obtaining thick crack-free films was to choose an appropriate heating profile. In this study, the deflection of a single layer at various stages of heating was analysed through the measurement of the wafer curvature using the Dektak profilometer. As a result three characteristic changes of deflection were found, happening at 300, 450 and 500°C. These obvious changes in wafer deflection closely relate to the transformations of sol-to-gel, gel-to-amorphous solid and amorphous solid-to-solid crystals. Furthermore, using these temperatures to thermally treat each single layer, it was possible to obtain thick crack-free films by repeatedly spin coating. The dielectric and piezoelectric properties, such as d 33,f and e 31,f , of the films with different thicknesses and orientations were measured and compared.

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“…Ferroelectric thin films can be prepared by a number of different deposition methods for example, ion beam sputtering [5], rf magnetron sputtering [6] or dc magnetron sputtering [7], pulsed laser deposition (PLD) [8], chemical vapour deposition (MOCVD) [9][10] and chemical solution deposition (CSD) [11][12]. The sol-gel method is preferred for many applications because it offers both compositional control and reduced-temperature processing of highly uniform, dense, crack-free films.…”

Section: Introductionmentioning

confidence: 99%

Stress-Induced Phase Formation of PZT 52/48 Thin Films

Zhang

Cordova

Marshall

et al. 2007

Integrated Ferroelectrics

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In this work, tetragonal and rhombohedral phases in PZT 52/48 thin films were identified using XRD. The relative intensities of these phases were calculated. The presence of the rhombohedral phase may have implications for the piezoelectric properties, since the polar axis in rhombohedral crystals lies along the (111) body diagonal rather than the (001) axis for tetragonal crystals.The effects of stress on phase co-existence at the morphotropic phase boundary were also investigated. Two PZT52/48 films were grown under the compressive stresses of different magnitudes. For the film grown under smaller compressive stress, twophase co-existence was observed, but the film grown under larger compressive stress was observed to be rhombohedral dominant. The piezoelectric coefficient, d 33,f of the rhombohedral dominant film was less than that of the mixed-phase film. It is possible that a (001)/(100) oriented film of slightly tetragonal composition (e.g. 48/52) could have higher piezoelectric coefficients than a mixed-phase MPB film.

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Surface acoustic wave propagation on lead zirconate titanate thin films

Cited by 97 publications

References 5 publications

Investigation on preparation and properties of Pb(Zr0.95Ti0.05)O3 thin films

Investigation on preparation and properties of Pb(Zr0.95Ti0.05)O3 thin films

The investigation of key processing parameters in fabrication of Pb(Zr x Ti1−x )O3 thick films for MEMS applications

Stress-Induced Phase Formation of PZT 52/48 Thin Films

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