Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon

Mantzaris, Nikos V.; Gogolides, Εvangelos; Boudouvis, Andreas G.; Rhallabi, A.; Turban, G.

doi:10.1063/1.361205

Cited by 81 publications

(78 citation statements)

References 21 publications

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“…They revealed the effect of dc bias by examining electron temperatures and densities of electrons, ions, and neutrals. Examples of modeling of CH 4 plasmas, like the present work, are also found in literature on the deposition of carbon films [12][13][14] although their CH 4 pressure ranges ͑p CH 4 = 10-250 mTorr͒ are relatively lower than that suitable for CNT growth ͑1 -10 Torr͒.…”

Section: Introductionmentioning

confidence: 94%

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Okita

Suda

Ozeki

et al. 2006

Journal of Applied Physics

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Carbon nanotubes ͑CNTs͒ were grown on Si substrates by rf CH 4 plasma-enhanced chemical vapor deposition in a pressure range of 1 -10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. CH 4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as CH 3 , C 2 H 5 , and C 2 H 5 + was consistent with estimations from experimental results.

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Section: Introductionmentioning

confidence: 94%

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Okita

Suda

Ozeki

et al. 2006

Journal of Applied Physics

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“…The adsorbed density of the various radicals in this adsorbed layer is temperature dependent, and at elevated substrate temperatures enhanced desorption leads to depletion of the adsorbed layer and, thus, to lower deposition rates. Mantzaris et al 30 have modeled the growth rate also via an adsorbed layer model. They show that the deposition rate decreases drastically with increasing substrate temperature which again is due to a strong increase in desorption of neutral particles from the adsorbed layer.…”

Section: A Deposition Of A-c:h and The Influence Of Substrate Tempermentioning

confidence: 99%

Effect of substrate conditions on the plasma beam deposition of amorphous hydrogenated carbon

Gielen

Kessels

Sanden

et al. 1997

Journal of Applied Physics

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A study on the effect of substrate conditions was performed for the plasma beam deposition of amorphous hydrogenated carbon ( a-C:H) from an expanding thermal argon/acetylene plasma on glass and crystalline silicon. A new substrate holder was designed, which allows the control of the substrate temperature independent of the plasma settings with an accuracy of 2 K. This is obtained via a combination of a good control of the holder’s yoke temperature and the injection of helium gas between thermally ill connected parts of the substrate holder system. It is demonstrated that the substrate temperature influences both the a-C:H material quality and the deposition rate. The deposition rate and substrate temperature are presented as the two parameters which determine the material quality. In situ studies prove that the deposition process is constant in time and that thermally activated etching processes are unlikely to contribute significantly during deposition. Preliminary experiments with an additional substrate bias reveal that an energetic ion bombardment of the growing film surface does not influence the deposition process. A tentative deposition model is proposed based on the creation and destruction of active sites, which depend on the particle fluxes towards the substrate and the substrate temperature. This model allows the qualitative explanation of the observed deposition results.

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“…23,24 The adsorbed neutral radicals CH 3 and CH 2 can be thermally dissociated in the following reactions:…”

Section: B the Surface Modelmentioning

confidence: 99%

Simulation study of nanoparticle coating in a low pressure plasma reactor

Pourali

Foroutan

2015

Physics of Plasmas

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A self-consistent combination of plasma fluid model, nanoparticle heating model, and surface deposition model is used to investigate the coating of nanosize particles by amorphous carbon layers in a low pressure plasma reactor. The numerical results show that, owing to the net heat release in the surface reactions, the particle temperature increases and its equilibrium value remains always 50 K above the background gas temperature. The deposition rate decreases with increasing of the particle temperature and the corresponding time scale is of the order of 10 ms. The deposition rate is also strongly affected by the change in plasma parameters. When the electron temperature is increased, the deposition rate first increases due to the enhanced ion and radical generation, shows a maximum and then declines as the particle temperature rises above the gas temperature. An enhancement in the background gas pressure and/or temperature leads to a reduction in the deposition rate, which can be explained in terms of the enhanced etching by atomic hydrogen and particle heating by the background gas. V C 2015 AIP Publishing LLC.

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Surface and plasma simulation of deposition processes: CH4 plasmas for the growth of diamondlike carbon

Cited by 81 publications

References 21 publications

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Predicting the amount of carbon in carbon nanotubes grown by CH4 rf plasmas

Effect of substrate conditions on the plasma beam deposition of amorphous hydrogenated carbon

Simulation study of nanoparticle coating in a low pressure plasma reactor

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