“…In addition, the method is safe in order not to use dangerous gas and high energy laser light, compared with the method such as plasma CVD, pulsed laser deposition etc. Because of its versatility, we have been able to develop several kinds of functional thin films, such as tungsten carbide, silicon carbide, chromium carbide, titanium carbide, cubic boron nitride, carbon nitride and silicon nitride using the sputtering deposition method [9][10][11][12][13][14][15][16][17][18][19][20][21][22]. However, it is hard to control metal doping ratio using conventional sputtering deposition method, because high density bulk targets, (>3g/cm 3 and >95% in density) are generally used in the sputtering deposition method.…”