Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces

Wohllebe, A.; Holländer, B.; Mesters, S.; Dieker, C.; Crecelius, G.; Michelsen, W.; Mantl, S.

doi:10.1016/s0040-6090(96)08733-0

Cited by 15 publications

(7 citation statements)

References 16 publications

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“…The energy realized can increase the temperature substrate surface over 630 °C, which in turn could result in decrease of the stable clusters surface density with the average cluster size increase, that we have observed in our experiments (Fig.7). Since single-atom diffusion is assumed to be the most predominant contribution in during the growth and surface diffusion of clusters has a larger activation energy [27]. Thus, with slight temperature increase single atoms get more mobile on the surface and can diffuse over longer distances to stable clusters [26].…”

Section: Growth Kinetics Discussionmentioning

confidence: 99%

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Тарасов

Visotin

Aleksandrovsky

et al. 2017

Journal of Magnetism and Magnetic Materials

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This work investigates the Si/Fe flux ratio (2 and 0.34) influence on growth of β-FeSi 2 polycrystalline thin films on Si(100) substrate at 630 ˚C. Lattice deformation for the films obtained are confirmed by X-ray diffraction analysis (XRD). The volume unit cell deviation from that of β-FeSi 2 single crystal are 1.99 % and 1.1 % for Si/Fe = 2 and Si/Fe = 0.34, respectively. Absorption measurements show that the indirect transition (~ 0.813 eV) of the Si/Fe = 2 sample changes to the direct transition with a bandgap value of ~0.806 eV for the sample prepared at Si/Fe = 0.34. Along with this direct transition, the absorption spectra exhibit an additional feature with an excitation energy of ~0.56 eV. Surface magneto-optic Kerr effect (SMOKE) measurements detect ferromagnetic behavior of the β-FeSi 2 polycrystalline films grown at Si/Fe = 0.34 at T=10 K, but no ferromagnetism was observed in the samples grown at Si/Fe = 2. Theoretical calculations refute that the cell deformation can cause the emergence of magnetization and argue that the origin of the ferromagnetism, as well as the lower impurity direct transition, is β-FeSi 2 stoichiometry deviations. Raman spectroscopy measurements evidence that the film obtained at Si/Fe flux ratio equal to 0.34 has the better crystallinity than the Si/Fe = 2 sample.

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Section: Growth Kinetics Discussionmentioning

confidence: 99%

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Тарасов

Visotin

Aleksandrovsky

et al. 2017

Journal of Magnetism and Magnetic Materials

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“…In the case of high Fe/Si ratio, due to the insufficient supply of Si atoms, it is likely that Fe adatoms will migrate a longer distance or will diffuse into the silicon substrate rather than being trapped by Si atoms at the surface. This process involves an interdiffusion mechanism [26], which will lead to a degradation of b-FeSi 2 film morphology as seen in Fig. 6a.…”

Section: Effect Of Fe/si Ratiomentioning

confidence: 99%

“…RHEED instrument is usually used for real-time monitoring the changes of the surface structure of b-FeSi 2 film during the growth [6,9,26]. At the beginning of the growth, an incident electron beam was grazing Si (1 1 1) substrate along ½11 0 direction at the angle of 21 or 31.…”

Section: Rheed and Tem Studiesmentioning

confidence: 99%

MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate

Lalev

Wang

et al. 2005

Journal of Crystal Growth

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“…FeSi 2 layers have been made by various techniques such as MBE [20,63], vapour phase epitaxy [64,65] and ion beam synthesis [60]. an understoichiometric ratio of 1:3 at substrate temperatures in the range 640-720 • C various kinds of islands nucleate [66]. A more detailed analysis revealed that the facetted precipitates were of the α-phase, whereas the nearly round shaped islands were of the β-phase.…”

Section: The Allotaxial Growth Of Buried α-And β-Fesi 2 In Si(111)mentioning

confidence: 99%

Molecular beam allotaxy: a new approach to epitaxial heterostructures

Mantl

1998

J. Phys. D: Appl. Phys.

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The present status of a new epitaxial growth method, named molecular beam allotaxy (MBA), is reviewed. The method allows one to grow single-crystalline heterostructures in a new way; that is, the desired layer forms during annealing of a precipitate layer. The precipitates are embedded within a single-crystalline matrix, grown by molecular beam epitaxy. The key point is that the epitaxial growth of the matrix persists from the substrate through the spacings between the inclusions to the overlayer. The precipitates coarsen and coalesce into a uniform layer during a subsequent high-temperature treatment, the second processing step. We discuss the present theoretical model of the layer formation during annealing which is based on inhomogeneous Ostwald ripening and particle coalescence. We place particular emphasis on the growth of precipitates in single-crystalline silicon, since MBA is based on precipitate growth and these nanoparticles exhibit interesting phenomena, such as self-ordering. We discuss the influence of the growth parameters on the layer quality and provide optimized growth and annealing parameters. MBA has been used so far mainly for the growth of epitaxial silicide heterostructures. The metallic disilicide CoSi 2 on Si(100) serves as a model system because of its interesting material properties and its potential for microelectronic and optoelectronic applications. The structural and electrical properties of the obtained epitaxial Si/CoSi 2 /Si(100) heterostructures are reviewed. We also discuss the growth of a ternary silicide, Co 1−y Pd y Si 2 , showing that MBA can be applied also for ternary compounds. We see a great potential in the semiconducting silicides β-FeSi 2 and Ru 2 Si 3 , which can be grown by MBA. As a further test of the MBA method we investigated the growth of a buried SiO x layer in Si(100). The use of epitaxial silicides as compliant substrates and as building blocks for new microelectronic and optoelectronic devices is briefly reviewed.

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Surface diffusion of Fe and island growth of FeSi2 on Si(111) surfaces

Cited by 15 publications

References 16 publications

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

Si/Fe flux ratio influence on growth and physical properties of polycrystalline β-FeSi2 thin films on Si(100) surface

MBE growth of β-FeSi2 epitaxial film on hydrogen terminated Si (1 1 1) substrate

Molecular beam allotaxy: a new approach to epitaxial heterostructures

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