Surface electronic states in metal–porous silicon–silicon structures

Tretyak, O. V.; Skryshevsky, V. A.; Викулов, В. А.; Boyko, Yu. V.; Zinchuk, V. M.

doi:10.1016/s0040-6090(03)01234-3

Cited by 11 publications

(8 citation statements)

References 22 publications

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“…There is the dependence of adsorption effect (I-I o )/I o on applied voltage, when (I-I o )/I o decreases at the increase of forward voltage biases, and linear dependence of (I-I o )/I o on hydrogen concentration (Fig.4). To explain the experimental results we account the surface states insides of pores and/or at PS-Si and PS-SiO 2 interfaces that was done before in [14,15]. …”

Section: Resultsmentioning

confidence: 99%

Method for Determination of Characteristics of Sensors Based on Electroconducting Polymers

Usenko¹

2008

SEMST

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IMPROVED HYDROGEN DETECTION OF ISLAND TYPE PALLADIUM FILM -NANOPOROUS SILICON DIODE AT ROOM TEMPERATURE V. A. Skryshevsky, V. Polischuk, A. I. Manilov, I. V. Gavrilchenko, R. V. SkryshevskyAn island type palladium film -silicon diode hydrogen sensor has been developed applying thin (15-75 nm) nanoporous silicon as an intermediate sensitive layer. Using a thermal Pd deposition into porous silicon allows to vary the size and morphology of the metal islands in the porous silicon matrix. The gas sensor behaviour under hydrogen exposure in mixture of 200 ppm-10% H 2 and dry synthetic (20%O 2 +80 %N 2 ) air was investigated by measuring the I-V characteristics. The diode current and sensor hydrogen sensitivity is shown to depend on the type of silicon substrate and the thickness of porous silicon. The current change versus hydrogen concentrations shows the linear law both for large and small hydrogen concentrations. At room temperature the sensor sensitivity is approximately 1 μA/100ppm, the response and recovery times lies in 1-8 min range. Ðîçðîáëåíî ñåíñîð âîäíþ íà îñíîâ³ ñòðóêòóðè îñòð³âêîâà ïë³âêà ïàëëàä³þ -êðåìí³ºâèé ä³îä, âèêîðèñòîâóþ÷è òîíêèé (15-75 íì) øàð íàíîïîðèñòîãî êðåìí³þ â ÿêîñò³ ïðîì³aeíîãî ÷óòëèâîãî øàðó. Âèêîðèñòàííÿ òåðì³÷íîãî îñàäaeåííÿ ïàëëàä³þ â ïîðóâàòèé êðåìí³é äîçâî-ëÿº çì³íþâàòè ðîçì³ð òà ìîðôîëîã³þ ìåòàëåâèõ îñòðîâê³â â ìàòðèö³ ïîðóâàòîãî êðåìí³þ. Ïîâåä³íêà ãàçîâîãî ñåíñîðà ïðè åêñïîçèö³¿ âîäíþ â ñóì³ø³ 200 ppm-10 % H 2 òà ñóõîãî ñèíòå-òè÷íîãî ïîâ³òðÿ (20 % O 2 + 80 % N 2 ) áóëà äîñë³äaeåíà øëÿõîì âèì³ð³â âîëüò-àìïåðíèõ õàðàê-òåðèñòèê. Ä³îäíèé ñòðóì ³ ÷óòëèâ³ñòü ñåíñîðó âîäíþ çàëåaeàòü â³ä òèïó êðåìí³ºâî¿ ï³äêëàäêè ³ òîâùèíè ïîðóâàòîãî êðåìí³þ. Çì³íà ñòðóìó â³ä êîíöåíòðàö³¿ âîäíþ ïîêàçóº ë³í³éíó çàëå-V. A. Skryshevsky, V. Polischuk, A. I. Manilov, I. V. Gavrilchenko, R. V. Skryshevsky

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Section: Resultsmentioning

confidence: 99%

Method for Determination of Characteristics of Sensors Based on Electroconducting Polymers

Usenko¹

2008

SEMST

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“…In the case of nanoporous Si interface, these spectra can be fitted by at least two Gaussian curves with activation energy Е 1 и Е 2 . The shape and intensity of DLTS curves depends strongly on nanoporous Si thickness [17]. For example, for thinner nanoporous Si layers dried in N 2 atmosphere the additional peaks of negative sign is observed.…”

Section: Dlts Curvesmentioning

confidence: 99%

Basics of MIS-type gas sensors with thin nanoporous silicon

Skryshevsky

2014

2014 IEEE 34th International Scientific Conference on Electronics and Nanotechnology (ELNANO)

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This paper presents a model of the electrical transport in MIS structure of metal -thin nanoporous silicon-p-Si. The obtained analytical expressions allow analyzing the contribution of the porous silicon and surface electronic states to the electrical behavior of the structure at gas adsorption. The parameters of surface electronic states for different porous silicon thickness are obtained from analysis of experimental I-V curves and DLTS spectra. The high sensitive hydrogen sensor operated at T room based on MIS structure with porous silicon layer is considered.

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“…However, especially in the case of resistor type semiconductor gas sensor, what we really need is high surface/volume ratio, which can be fulfilled easily by thin layers as well. On the other hand, there is nothing to do with an extremely high specific area porous material, if its Fermi-level is pinned, as it is suggested in [22] and [36,37] for the case of porous silicon. This is one possible reason for the fact that there is a huge number of articles dealing with PSi chemical and biosensors, but only a very few dealing with resistor type gas sensors.…”

Section: Application Of Porous Silicon In Gas Sensor Technologymentioning

confidence: 99%

Gas sensor applications of porous Si layers

Mizsei

2007

Thin Solid Films

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Surface electronic states in metal–porous silicon–silicon structures

Cited by 11 publications

References 22 publications

Method for Determination of Characteristics of Sensors Based on Electroconducting Polymers

Method for Determination of Characteristics of Sensors Based on Electroconducting Polymers

Basics of MIS-type gas sensors with thin nanoporous silicon

Gas sensor applications of porous Si layers

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