Surface electronic structure of InSb(001)-c(8×2)

Walczak, Łukasz; Goryl, Grzegorz; Valbuena, Miguel A.; Vobornik, I.; Tejeda, Antonio; Taleb‐Ibrahimi, A.; Kołodziej, Jacek; Segovia, P.; Michel, E. G.

doi:10.1016/j.susc.2012.09.009

Cited by 4 publications

(2 citation statements)

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“…3, surface resonances are present at the Γ point, aligned with the VBM(0) to within accuracy of our measurements, both for clean and S-passivated InAs(001) surfaces. Similar results have been obtained before 28,32,55 . Based on the spectra shown in Fig.…”

Section: Resultssupporting

confidence: 89%

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Effect of a skin-deep surface zone on the formation of a two-dimensional electron gas at a semiconductor surface

et al. 2016

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Two-dimensional electron gases (2DEGs) at surfaces and interfaces of semiconductors are described straightforwardly with a one-dimensional (1D) self-consistent Poisson-Schrödinger scheme. However, their band energies have not been modeled correctly in this way. Using angle-resolved photoelectron spectroscopy we study the band structures of 2DEGs formed at sulfur-passivated surfaces of InAs(001) as a model system. Electronic properties of these surfaces are tuned by changing the S coverage, while keeping a high-quality interface, free of defects and with a constant doping density. In contrast to earlier studies we show that the Poisson-Schrödinger scheme predicts the 2DEG band energies correctly but it is indispensable to take into account the existence of the physical surface. The surface substantially influences the band energies beyond simple electrostatics, by setting nontrivial boundary conditions for 2DEG wave functions.

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Section: Resultssupporting

confidence: 89%

“…3(b). Based on the detailed studies of the clean In-rich InAs surface we find the difference in energy between the VBM(0) and B7M (0) [28,32,55].…”

Section: Resultsmentioning

confidence: 99%