Reconstructions of the sulfur-passivated InSb (100) surface

High quality InAsSb-based heterostructure n-i-p mid-wavelength infrared photodiode

“…However, For MCT material, due to the high Hg vapor pressure during material growth, it suffers from non-uniformity and instability. Antimony (Sb) based III-V semiconductors are considered as viable alternatives for the state-of-the-art technology [2][3][4][5][6][7][8][9][10][11][12] . Among them, InAs1-xSbx alloy has gained much interest due to their wide bandgap tunability by changing Sb composition [13][14][15][16] , with lattice matched condition to GaSb substrate when Sb composition is ~9% 1,17 .…”