Surface flashover of silicon

Peterkin, F.E.; Ridolfi, T.; Buresh, L. L.; Hankla, B.J.; Scott, D.K.; Williams, P. F.; Nunnally, W.C.; Thomas, B.L.

doi:10.1109/16.64518

Cited by 33 publications

(6 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A similar 0021-8979/2015/117(7)/073301/5/$30.00 V C 2015 AIP Publishing LLC 117, 073301-1 velocity ($1.5 Â 10 7 cm/s) of light front propagation was obtained in Ref. 10 where a streak camera was used to study time-resolved evolution of the flashover along the surface of n-type silicon with an applied average electric field of $30 kV/cm. A larger velocity, up to 5 Â 10 8 cm/s of light emission front propagation initiated at the CTJ was observed in experiments with polymethyl methacrylate subject to a 100 kV/cm pulse with a 30 ns rise time.…”

Section: Introductionsupporting

confidence: 76%

“…The velocity of the light emitting plasma front propagation was found to be $2.4 Â 10 6 cm/s at the average electric field of $100 kV/cm, which is $10 times smaller than that obtained in experiments. [9][10][11] Recently, results of experiments 13 were presented where the evolution of the flashover between electrodes placed on an alumina surface in vacuum was recorded by a fast intensified framing camera. In these experiments, the curvature of the conducting surfaces facing each other was changed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Time- and space-resolved light emission and spectroscopic research of the flashover plasma

Gleizer

Krasik

Leopold

2015

Journal of Applied Physics

View full text Add to dashboard Cite

The results of an experimental study of the evolution of surface flashover across the surface of an insulator in vacuum subject to a high-voltage pulse and the parameters of the flashover plasma are reported. For the system studied, flashover is always initiated at the cathode triple junctions. Using time-resolved framing photography of the plasma light emission the velocity of the light emission propagation along the surface of the insulator was found to be $2.5Á10 8 cm/s. Spectroscopic measurements show that the flashover is characterized by a plasma density of 2-4 Â 10 14 cm À3 and neutral and electron temperatures of 2-4 eV and 1-3 eV, respectively, corresponding to a plasma conductivity of $0.2 X À1 cm À1 and a discharge current density of up to $10 kA/cm 2 . V C 2015 AIP Publishing LLC. [http://dx.08:05:16 FIG. 3. Typical waveforms of voltage (a), current (b), and fast camera synchronized pulse (c) for the case of 15 mm polypropylene sample. FIG. 4. Images of flashover plasma along a 15 mm high, 50 mm diameter Polypropylene sample. (a) t d % 4 ns, MCP voltage: 860 V; (b) t d % 8 ns, MCP voltage: 860 V; (c) t d % 26 ns, MCP voltage: 750 V; (d) t d % 34 ns, MCP voltage: 750 V. Frame duration is 5 ns.

show abstract

Section: Introductionsupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Time- and space-resolved light emission and spectroscopic research of the flashover plasma

Gleizer

Krasik

Leopold

2015

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The thermal effects of the semiconductor currents in the surface region and the electron bombardment produce significant gas desorption [4]. The thermal effects of the semiconductor currents in the surface region and the electron bombardment produce significant gas desorption [4].…”

Section: Discussionmentioning

confidence: 99%

Surface flashover sensitivity of silicon in vacuum

1994

View full text Add to dashboard Cite

The high flashover sensitivity of high resistivity silicon in vacuum is discussed. Surface flashover fields of 5 -30 kV/cm are common in silicon-vacuum systems, even though the intrinsic critical fields of silicon and vacuum are >300 kV/cm. The influences of the material (bulk quality and surface processing), contact technology, contact geometry and electrode configuration on the preflashover and surface flashover characteristics of wafer samples in vacuum are analyzed.

show abstract

“…Photoconductive semiconductor switches (PCSSs) are gradually being used in high-voltage and high-power fields [1]. However, the surface flashover phenomena always occur across the semiconductor while the applied voltage is far lower than its intrinsic breakdown strength (∼300 V cm −1 for silicon), which considerably limits further development of high-field semiconductor devices [2,3]. Therefore, many researchers have paid much attention to the phenomena and its mechanism.…”

Section: Introductionmentioning

confidence: 99%

Flashover development process across silicon and surface microcosmic phenomena induced by pulsed voltage in air

Zhao¹,

Zhang²,

Dong³

et al. 2007

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

We report the flashover development phenomenon across a polished silicon wafer and its damage effect on the silicon surface under pulsed excitation of ∼0.4/2.5 µs with a peak value of >6 kV in atmospheric air. A visible light channel connecting two electrodes is observed before the complete flashover occurs. The filament and pit–jut damages induced by the flashover are found on the silicon surface. A comprehensive flashover development hypothesis is proposed according to which first the filamentary current process occurs in the surface layer of a semiconductor and then the ionization process of air ambient above the surface occurs. The observed surface damages are considered to be closely correlated with the two processes.

show abstract

Surface flashover of silicon

Cited by 33 publications

References 9 publications

Time- and space-resolved light emission and spectroscopic research of the flashover plasma

Time- and space-resolved light emission and spectroscopic research of the flashover plasma

Surface flashover sensitivity of silicon in vacuum

Flashover development process across silicon and surface microcosmic phenomena induced by pulsed voltage in air

Contact Info

Product

Resources

About