Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Kawarada, Hiroshi; Wild, C.; Herres, N.; Koidl, P.; Mizuochi, Y.; Hokazono, A.; Nagasawa, Hiroyuki

doi:10.1063/1.121213

Cited by 19 publications

(9 citation statements)

References 19 publications

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“…Other important surface processes involved in the growth of hydrocarbon films are detailed elsewhere [21,22]. We note that changes of surface morphology of carbon-based films under different process conditions have been previously reported by other authors [23][24][25].…”

Section: Resultsmentioning

confidence: 86%

PECVD of Carbon Nanostructures in Hydrocarbon‐Based RF Plasmas

Ostrikov¹,

Tsakadze

Rutkevych

et al. 2005

Contrib. Plasma Phys.

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Different aspects of the plasma-enhanced chemical vapor deposition of various carbon nanostructures in the ionized gas phase of high-density, low-temperature reactive plasmas of Ar+H2+CH4 gas mixtures are studied. The growth techniques, surface morphologies, densities and fluxes of major reactive species in the discharge, and effects of the transport of the plasma-grown nanoparticles through the near-substrate plasma sheath are examined. Possible growth precursors of the carbon nanostructures are also discussed. In particular, the experimental and numerical results indicate that it is likely that the aligned carbon nanotip structures are predominantly grown by the molecular and radical units, whereas the plasma-grown nanoparticles are crucial components of polymorphous carbon films.

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Section: Resultsmentioning

confidence: 86%

PECVD of Carbon Nanostructures in Hydrocarbon‐Based RF Plasmas

Ostrikov¹,

Tsakadze

Rutkevych

et al. 2005

Contrib. Plasma Phys.

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“…Plasma-deposited diamond is polycrystalline when grown on a high-purity noncarbon substrate material, usually a Si wafer. Some success was achieved in growing diamond grains with the same crystal orientation on a different substrate (β-SiC), and the resulting films showed promising electronic properties (9). But β-SiC is also difficult to synthesize, and general progress was impaired by not having available diamond of the required quality.…”

Section: S C I E N C E ' S C O M P a S Smentioning

confidence: 99%

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Isberg¹,

Hammersberg²,

Johansson³

et al. 2002

Science

1,162

483

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Room-temperature drift mobilities of 4500 square centimeters per volt second for electrons and 3800 square centimeters per volt second for holes have been measured in high-purity single-crystal diamond grown using a chemical vapor deposition process. The low-field drift mobility values were determined by using the time-of-flight technique on thick, intrinsic, freestanding diamond plates and were verified by current-voltage measurements on p-i junction diodes. The improvement of the electronic properties of single-crystal diamond and the reproducibility of those properties are encouraging for research on, and development of, high-performance diamond electronics.

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“…1,2 However, their polycrystalline nature and the relatively high concentration of structural defects still represent a severe limitation for many applications. This is why the performance of several diamond-based devices currently under investigation [3][4][5] is strongly influenced by the growth and operating conditions.…”

Section: Angelone and M Pillonmentioning

confidence: 99%

High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection

Marinelli

Milani

Paoletti

et al. 1999

Applied Physics Letters

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Diamond films were grown on silicon by microwave chemical-vapor deposition using a CH 4 -H 2 gas mixture. The crystalline quality of the films was assessed through their ␣-particle detection performance, a property highly sensitive to film quality, by using a 5.5 MeV 241 Am source. A maximum collection efficiency of 70%, 50% being the average value, was obtained in a 115-m-thick sample after ␤-particle irradiation ͑''priming effect''͒. Unprimed efficiency ϭ50% maximum, 30% average, was also obtained on other samples. The dependence of the efficiency and the resolving power on the external electric field was studied as well. The results are interpreted by means of a Monte Carlo analysis of the ␣-particle detection process. It is concluded that, in the priming process, a saturation occurs of deep defects limiting the as-grown detector performance, and charge collection distance is only limited by grain boundaries located close to the substrate side. Therefore, there is indication that further improvement can be reasonably obtained by increasing film thickness. © 1999 American Institute of Physics. ͓S0003-6951͑99͒02846-6͔ Synthetic diamond films grown by chemical-vapor deposition ͑CVD͒ have a great potential for applications in several fields, due to the many ͑mechanical, optical, electronic, etc.͒ exceptional properties of diamond. 1,2 However, their polycrystalline nature and the relatively high concentration of structural defects still represent a severe limitation for many applications. This is why the performance of several diamond-based devices currently under investigation 3-5 is strongly influenced by the growth and operating conditions.A particularly important and high-quality demanding application of diamond films is nuclear particle detection. 6,7 The high-energy gap of diamond results in a very low number of free carriers, leading to extremely low-leakage currents. Moreover, the radiation hardness and the hightemperature operation capability of such devices is strongly increased with respect to silicon-based detectors, a crucial feature in view of the operation of next-generation particle accelerators. 8 The main parameters assessing the quality of CVD diamond films to be used as particle detectors are the charge collection distance ͑CCD͒ and the efficiency, defined as follows. When an electron-hole pair is created by an ionizing particle in a parallel-plate detector of thickness ͑i.e., electrode spacing͒ L, it induces 9,10 in the external circuit a charge q c ϭex/L, x being the total distance the electron and hole move apart. The CCD is the average drift distance and is given by ␦ϭ͑ e ϩ h ͒ E, ͑1͒where e , h are the electron and hole mobilities, respectively, is the mobility weighted lifetime of electrons and holes, and E is the applied electric field. The efficiency is the ratio of the collected charge Q c to the total charge Q 0 generated by the ionizing particleThe link between and ␦ can be deduced from the HechtG being the penetration depth in L of the particles to be detected ͓for Eq. ͑3͒ we assum...

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Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Abstract: Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures

Cited by 19 publications

References 19 publications

PECVD of Carbon Nanostructures in Hydrocarbon‐Based RF Plasmas

PECVD of Carbon Nanostructures in Hydrocarbon‐Based RF Plasmas

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

High-quality diamond grown by chemical-vapor deposition: Improved collection efficiency in α-particle detection

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