Surface Passivation of HgCdTe Using Low-Pressure Chemical Vapor Deposition of CdTe

Banerjee, Sneha; Su, Pei-Fang; Dahal, R.; Bhat, Ishwara B.; Bergeson, Jeremy D.; Blissett, C.; Aqariden, F.; Hanyaloglu, Bengi

doi:10.1007/s11664-014-3178-2

Cited by 9 publications

(1 citation statement)

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“…In our earlier work, we reported that the good growth window for LPCVD at low temperature is very narrow and good flow control of the precursors is necessary to obtain a uniform CdTe passivation layer. 8 Hence, a chiller was installed for cooling the DMCd bubbler to 6°C for precise molar flow control. The hot-wall configuration consists of two clamshell heaters.…”

Section: Methodsmentioning

confidence: 99%

A Novel Method to Obtain Higher Deposition Rates of CdTe Using Low Temperature LPCVD for Surface Passivation of HgCdTe

Banerjee

Dahal

Bhat

2015

Journal of Elec Materi

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The deposition rate of CdTe passivation films has been increased greatly by the implementation of a novel design of a graphite cracker cell. This cracker cell, consisting of an integrated diffuser, facilitates the efficient cracking of precursors. CdTe deposition rate has been increased from $50 nm/h (without any cracker cell) to $420 nm/h using this novel experimental set-up. H 2 flow through the main gas flow line has been increased to obtain a progressive increase in deposition rates. CdTe deposited on high aspect ratio HgCdTe samples showed adequate conformal coverage on the side walls and also on the bottom of the trenches. Microwave photoconductive decay measurements were done on planar and patterned HgCdTe substrates at 77 K to extract the minority carrier lifetimes. There was a significant improvement in the lifetime of planar HgCdTe samples after CdTe passivation, though patterned HgCdTe samples showed a minor improvement. An additional annealing step was conducted at 250°C for 20 min in the presence of H 2 after the deposition of CdTe passivation films. Minority carrier lifetimes improved further post-annealing, probably due to the formation of a graded interface between CdTe and HgCdTe.

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Section: Methodsmentioning

confidence: 99%