Surface transfer doping of diamond by MoO₃: A combined spectroscopic and Hall measurement study

Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

“…9,11 The evolution of diamond C 1s PES spectra, as a function of V 2 O 5 coverage, is shown in Figure 2 (Figure 1(b)). The band bending amount, and thus the areal hole concentration on the diamond surface, is comparable with that for MoO 3 doped diamond surface, 19 suggesting that V 2 O 5 is at least as effective in surface transfer doping of diamond as MoO 3 .…”

“…Details on the epitaxial growth of the boron-doped adlayer can be found in Ref. 19. Prior to PES measurements, the diamond sample was cleaned thoroughly by boiling in an acid mixture (H 2 SO 4 :HNO 3 :HClO 4 ¼ 1:1:1) to remove any metallic and organic adsorbates.…”

“…Similar work involving ALD deposition of Al 2 O 3 and HfO 2 has been explored for use in H-diamond MOSFETs. 17 Previous work has demonstrated the transition metal oxide MoO 3 to be a promising candidate for surface transfer doping of H-diamond, 18,19 showing a significant increase in carrier concentration and improvement in temperature stability over atmospheric transfer doping. In this study, we present V 2 20 Both the doping efficiency and the stability in air of V 2 O 5 outperform that of MoO 3 , [20][21][22] suggesting that V 2 O 5 may provide a more attractive transfer doping solution for application in diamond FET technology.…”

“…The experimental work in this study was carried out in two stages using (i) 4.7 mm 2 boron doped single crystal diamond 19 grown via chemical vapour deposition (CVD) on a type IIa (001) CVD sample (Element Six) and (ii) two intrinsic single crystal CVD diamonds 23 grown on Ib HPHT diamond substrates: stage 1-Photoemission spectroscopy (PES) of the H-diamond/V 2 O 5 interface and stage 2-Electrical characterisation of the subsurface hole channel in the diamond formed by V 2 O 5 and air-induced surface transfer doping.…”

Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures

“…Diamond is an outstanding semiconductor for high-power and high-frequency electronic applications due to the exceptional properties, such as wide bandgap, high breakdown electric field, outstanding thermal conductivity, and high carrier mobility. [1][2][3] Recently, encouraging progress, such as high cut-off frequency, has been achieved in diamond field-effect transistors (FETs) by using two-dimensional hole gas based on the ptype hydrogenated-terminated diamond surface. [4][5][6][7][8][9] Among the diamond FETs, metal-oxidesemiconductor FETs (MOSFETs) have been attracting growing interest because of the higher power handling capability.…”