Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Landini, B.E.

doi:10.1007/s11664-000-0082-8

Cited by 12 publications

(4 citation statements)

References 17 publications

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“…In general it has been reported in literature that the heights are one or two times the bilayer of 4H SiC. 8 In the present case the larger heights could be due to the combination of multiple step heights. It is evident from the AFM analysis that the Si-face epilayer showed greater surface roughness than the C-face epilayer.…”

supporting

confidence: 45%

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Konakanchi

Bhat

Chow

et al. 2005

Journal of Applied Physics

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High-quality Schottky junctions have been fabricated on n-type 4H SiC epitaxial layers grown by chemical-vapor deposition on C-and Si-face substrates in order to understand the effect of growth direction on the growth mechanism and formation of defects. Atomic force microscopy analysis showed dramatic differences between the surfaces of SiC epilayers grown on C and Si faces. There was a significant step bunching in the SiC grown on Si-face substrates. Current-voltage, capacitance-voltage, and deep-level transient spectroscopy ͑DLTS͒ measurements were carried out on the Schottky junctions to analyze the junction characteristics. The Schottky junctions on C-face SiC showed larger barrier heights than those on Si-face SiC, showing that each face has a different surface energy. The barrier heights of Ni Schottky junctions were found to be 1.97 and 1.54 eV for C-face and Si-face materials, respectively. However, the deep-level spectra obtained by DLTS were similar, regardless of the increased surface roughness of the Si-face 4H SiC.

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supporting

confidence: 45%

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Konakanchi

Bhat

Chow

et al. 2005

Journal of Applied Physics

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“…The substrates were degreased with organic solvents, de-oxidized with HF and rinsed with de-ionized water before being blown dry with Argon for growth. A Graphite susceptor with TaC coating was used as the sample holder [25]. TaC coating on graphite susceptor reduces the residual acceptor impurity (Boron) concentration present in graphite by serving as a getter [26] by providing thermal stability to graphite at high temperatures.…”

Section: Methodsmentioning

confidence: 99%

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

Balachandran

Song

Sudarshan

et al. 2016

Journal of Crystal Growth

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We report high quality homoepitaxial growth on nearly on-axis () 4H-SiC substrates by chemical vapor deposition (CVD) using Tetrafluorosilane and Propane as Si and C-precursors, respectively. N-type unintentional doping (10 17 cm-3 to 10 14 cm-3) was obtained for 0.62.0, a linear dependence on C-flow is established, with a return to stepmediated growth, shown by the surface morphology (RMS roughness~1nm), and high polytype uniformity from Raman at high R g-14um/hr. These two behaviors were ascribed to a decrease in the etch rate of SiC by SiF 4 with increasing C/Si due to C-aided decomposition of SiF 4 , both of which make available a greater amount of elemental Si at the surface, thereby suppressing spiral growth. Use of on-axis or near on-axis substrates can eliminate/reduce basal plane dislocations which limit the performance of SiC bipolar electronic devices.

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“…[11] It is obvious that the technique for unintentionally doped epilayers with low impurity concentration becomes very important. In order to achieve high quality SiC epilayers, there are various factors to be concerned with, [12] such as type of substrates, cleaning proce-dure, substrate susceptor, reactor dimensions, orientations, and so on. Regarding the graphite substrate susceptor, we must protect it by rigid metal carbide, i.e.…”

Section: Introductionmentioning

confidence: 99%

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

Wang

Zhang

et al. 2010

Chinese Phys. B

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This paper presents the results of unintentionally doped 4H-SiC epilayers grown on n-type Si-faced 4H-SiC substrates with 8° off-axis toward the [112̄0] direction by low pressure horizontal hot-wall chemical vapour deposition. Growth temperature and pressure are 1580 °C and 104 Pa, respectively. Good surface morphology of the sample is observed using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Fourier transform infrared spectroscopy (FTIR) and x-ray diffraction (XRD) are used to characterize epitaxial layer thickness and the structural quality of the films respectively. The carrier concentration in the unintentional 4H-SiC homoepitaxial layer is about 6.4×1014 cm−3 obtained by C–V measurements. Schottky barrier diodes (SBDs) are fabricated on the epitaxial wafer in order to verify the quality of the wafer and to obtain information about the correlation between background impurity and electrical properties of the devices. Ni and Ti/4H-SiC Schottky barrier diodes with very good performances were obtained and their ideality factors are 1.10 and 1.05 respectively.

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Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers

Cited by 12 publications

References 17 publications

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition

4H–SiC homoepitaxy on nearly on-axis substrates using TFS-towards high quality epitaxial growth

SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier diodes

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