Swift ion irradiation effect on high-k ZrO₂- and Al₂O₃-based MOS devices

Effects of post‐deposition annealing of cerium oxide passivation layer in nitrogen‐oxygen‐nitrogen ambient

“…The switching from oxidizing to reducing ambient, namely nitrogen ambient, has succeeded in inhibiting the formation of SiO 2 interfacial layer as the nitrogen species diffusing to the interface could limit further oxidation at the interface by oxygen species 17,32 . A similar effect was also reported for ZrO 2 passivation layer subjected to annealing in nitrogen ambient, wherein passivating the Si dangling bonds by nitrogen species has restrained the formation of interfacial layer 33‐35 . In addition, a strong Si‐N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density 36 .…”

“…17,32 A similar effect was also reported for ZrO 2 passivation layer subjected to annealing in nitrogen ambient, wherein passivating the Si dangling bonds by nitrogen species has restrained the formation of interfacial layer. [33][34][35] In addition, a strong Si-N bonding as well as relaxation of strained bonds between the CeO 2 passivation layer and Si surface could be realized through the utilization of nitrogen ambient that led to a reduction in interface trap density. 36 Similar findings have been revealed for HfO 2 37 as well as stacking CeO 2 /La 2 O 3 38 passivation layer subjected to nitridation, wherein an enhancement in carrier mobility as well as stable threshold voltage were established for the fabricated devices.…”