SWIR Geiger-mode APD detectors and cameras for 3D imaging

Itzler, Mark A.; Entwistle, Mark; Krishnamachari, Uppili; Owens, Mark; Jiang, Xudong; Slomkowski, Krystyna; Rangwala, Sabbir

doi:10.1117/12.2050798

Cited by 12 publications

(12 citation statements)

References 4 publications

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“…For example, in the integrated avalanche photodiode-based detector arrays and cameras [127], In bumps were deposited on the anode contact of each active region. The eutectic bonding between In and Au (on readout circuits) connected the photodiode array to an appropriate readout integrated circuit.…”

Section: Eutectic Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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Abstract:Silicon-based integrated systems are actively pursued for sensing and imaging applications. A major challenge to realize highly sensitive systems is the integration of electronic, optical, mechanical and fluidic, all on a common platform. Further, the interface quality between the tiny optoelectronic structures and the substrate for alignment and coupling of the signals significantly impacts the system's performance. These systems also have to be low-cost, densely integrated and compatible with current and future mainstream technologies for electronic-photonic integration. To address these issues, proper selection of the fabrication, integration and assembly technologies is needed. In this paper, wafer level bonding with advanced features such as surface activation and passive alignment for vertical electrical interconnections are identified as candidate technologies to integrate different electronics, optical and photonic components. Surface activated bonding, superior to other assembly methods, enables low-temperature nanoscaled component integration with high alignment accuracy, low electrical loss and high transparency of the interface. These features are preferred for the hybrid integration of silicon-based micro-opto-electronic systems. In future, new materials and assembly technologies may emerge to enhance the performance of these micro systems and reduce their cost. The article is a detailed review of bonding techniques for electronic, optical and photonic components in silicon-based systems.

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Section: Eutectic Bondingmentioning

confidence: 99%

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Howlader

Deen

2015

Photonics

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“…We have developed a reconfigurable design that accommodates either a 25 µm pixel diameter, single element InGaAs/InP single-photon detector operating in a scanning mode, or an array of 32 x 32, 100 µm pitch InGaAs/InP single-photon timing detector operating in a non-scanning mode [16]. The optical system was designed to provide diffraction limited performance for both types of detector, covering a full diagonal field of regard (FoR) of 0.073° with a spatial resolution of 11.4 cm at 4.2 km.…”

Section: System Descriptionmentioning

confidence: 99%

Long-range 3D single-photon imaging lidar system

Pawlikowska¹,

Pilkington

Gordon

et al. 2014

Electro-Optical Remote Sensing, Photonic Technologies, and Applications VIII; And Military Applications in Hyperspectral Imagin

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We describe a re-configurable scanning lidar system which can accommodate either a single element detector operating in a scanning mode or a 32 x 32 array detector operating in a non-scanning mode. The system uses a time-of-flight approach in conjunction with the single-photon counting technique to produce 3D images of non-cooperative targets at ranges of greater than one kilometre. Results of data acquired with a single-element detector in a scanning mode at 2.9 km and 4.6 km are reported. The field of view (FoV) was illuminated through a transmitter in a bi-static mode using 125 kHz repetition rate laser pulses at a wavelength of 1550 nm with an average optical power of 0.5W.

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“…FPAs based on InGaAs/InP APDs designed to be operated as single photon avalanche detectors (SPAD) are demonstrated by Itzler et al. with

128 \times 32

pixels including ROIC () as well as Sudharsanan et al. with

32 \times 32

pixels including ROIC ().…”

Section: Introductionmentioning

confidence: 99%

“…They achieved a dark-current density of 1.59 × 10 −4 A cm −2 at M = 10 at a required bias voltage of around 34 V. Dries et al published an InGaAs/InP APD array with 32 × 32 pixels including an appropriate readout integrated circuit (ROIC) for laser detection and ranging (LADAR) applications [4]. FPAs based on InGaAs/InP APDs designed to be operated as single photon avalanche detectors (SPAD) are demonstrated by Itzler et al with 128 × 32 pixels including ROIC [5] as well as Sudharsanan et al with 32 × 32 pixels including ROIC [6]. However, high operating bias voltages in the range of 34-60 V are reported in the named references which is difficult to handle by an ROIC when it comes to high-resolution and small-pixel-pitch FPAs.…”

mentioning

confidence: 99%

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

Kleinow

Rutz

Aidam

et al. 2015

Phys. Status Solidi A

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We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge, and multiplication (SAGCM) layers. Special attention has been paid to the charge layer in order to optimize the structure for low band discontinuities and an appropriate electric field distribution. Hereof, a combination of a p-type grading layer and charge layer is presented. Band-edge profile calculations as well as electro-optical characterization results of the APDs will be discussed in this article. Our optimized APD structures reveal low punch-through and low breakdown voltage of V-pt approximate to 8.5 V and V-bd approximate to 2.3 V, respectively. A maximum gain of M > 300 in the linear operation mode is demonstrated at room temperature and M = 10 has been measured at 20 V bias

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SWIR Geiger-mode APD detectors and cameras for 3D imaging

Cited by 12 publications

References 4 publications

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Low-Temperature Bonding for Silicon-Based Micro-Optical Systems

Long-range 3D single-photon imaging lidar system

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes

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