Switching Field Distributions in GMR Patterns with GdFe Free Layers Obtained by High-resolution Magneto-optical Microscopy

Abstract

The switching field distributions in GMR devices with GdFe free layers of Si/Ru (3 nm)/Cu (75 nm)/Ru (3 nm)/Cu (70 nm)/Ru (13 nm)/TbFeCo (10 nm)/CoFe (1 nm)/Ag (6 nm)/ GdFe (16.5 nm)/Ru (3 nm) were studied by using high-resolution magneto-optical (MO) microscopy. The MO images of patterns with shapes of circles, triangles, squares and hexagonals, and in various sizes with lengths along one side of 200 nm 50 µm and periods of 1 100 µm are studied. The high-resolution MO microscope had a CaF2 zoom lens that allowed us to obtain a spatial resolution as high as 200 nm. The switching field distributions were measured for the patterns with lengths along one side of 5 50 µm by analyzing the MO images.

Magneto-optical images of submicron-size Bi-substituted YIG patterns prepared by electron-beam irradiated metal-organic decomposition

“…The MO imaging measurements were carried out by a MO microscopy system with a polar Kerr effect setup (MOKE). 34) A blue LED with a central wavelength of 465 nm was used as a light source. The magnetization characteristics were measured by a vibrating sample magnetometer at room temperature.…”