No abstract

At ISPSD2013, we presented an SC-diode that realizes low forward voltage drop (VF), low reverse recovery loss and low leakage current at high temperature of over 175 °C, with a combination of very low injection efficiency and high carrier lifetime. This paper proposes an advanced low injection cathode concept with N Schottky region enabling the SC-diode to obtain excellent fast recovery characteristics, realizing a range of 10 kH switching frequency. We discuss a balance of injection efficiency between two sides (anode and cathode), which is very important for reducing voltage ringing during reverse recovery under low current turn-on condition of IGBTs. Furthermore, we have obtained high reverse recovery ruggedness by controlling impact ionization position where is only bottom of deep P anode layer.

The switching field distributions in GMR devices with GdFe free layers of Si/Ru (3 nm)/Cu (75 nm)/Ru (3 nm)/Cu (70 nm)/Ru (13 nm)/TbFeCo (10 nm)/CoFe (1 nm)/Ag (6 nm)/ GdFe (16.5 nm)/Ru (3 nm) were studied by using high-resolution magneto-optical (MO) microscopy. The MO images of patterns with shapes of circles, triangles, squares and hexagonals, and in various sizes with lengths along one side of 200 nm 50 µm and periods of 1 100 µm are studied. The high-resolution MO microscope had a CaF2 zoom lens that allowed us to obtain a spatial resolution as high as 200 nm. The switching field distributions were measured for the patterns with lengths along one side of 5 50 µm by analyzing the MO images.