Symmetric and Asymmetric Double Gate MOSFET Modeling

Abebe, Henok; Cumberbatch, E.; Morris, Hedley C.; Tyree, V.C.; Numata, T.; Uno, Shigeyasu

doi:10.5573/jsts.2009.9.4.225

Cited by 29 publications

(8 citation statements)

References 10 publications

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“…Whereas separately studying both symmetric (SDG) and asymmetric (ADG) double gate structures is undoubtedly useful [1,2], the generic asymmetric independently driven double gate (AIDG) condition is particularly important because it encompasses all possible cases [3]. Highly accurate and physics-based potential models, which are at the same time computationally manageable, are required to adequately model DG devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Ortíz‐Conde

Sánchez

2011

Solid-State Electronics

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Section: Introductionmentioning

confidence: 99%

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Ortíz‐Conde

Sánchez

2011

Solid-State Electronics

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“…Several resolution procedures have been proposed in previous works. They either rely on a numerical resolution of the set of equations [8]- [14], on interpolation functions between the transistor operation regimes [15], [16] or on approximation of the potential profile in the thin body [17], [18]. In addition, all the rigorous solutions require an a priori calculation of the boundaries between hyperbolic and trigonometric modes [8]- [10], [12], [13], involving the use of hardly tractable Lambert functions [19].…”

Section: Introductionmentioning

confidence: 99%

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

Poiroux

Rozeau

Scheer

et al. 2015

IEEE Trans. Electron Devices

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A detailed presentation of the latest version of the Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of low-doped ultrathin body and buried oxide fully depleted silicon-oninsulator transistors in all bias configurations, including strong forward back bias. In this part, a full analytical calculation of interface potentials, valid for all regimes of independent doublegate device operation, is detailed. This analytical computation, which is the heart of Leti-UTSOI2, provides explicit expressions for all quantities required to build dc and ac core models.Index Terms-Analytical models, compact modeling, fully depleted silicon-on-insulator (FDSOI), independent double-gate, semiconductor device modeling, SPICE, ultrathin body and buried oxide (BOX), ultrathin body BOX (UTBB).

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“…[1] has given many available applications of the Lambert W-function, while Ref. [2] used it to develop an analytical compact model for the asymmetric lightly doped MOSFET. Furthermore, the feedback linearization method and state feedback law to transform and eliminate the nonlinearity model of photovoltaic system into a simple equivalent linear model, were used to find a direct relation between the output and the control input, by using inverse dynamics [3,4].…”

Section: Introductionmentioning

confidence: 99%

Linearizing and Control of a Three-phase Photovoltaic System with Feedback Method and Intelligent Control in State-Space

Louzazni¹,

Aroudam²

2014

Transactions on Electrical and Electronic Materials

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Due to the nonlinearity and complexity of the three-phase photovoltaic inverter, we propose an intelligent control based on fuzzy logic and the classical proportional-integral-derivative. The feedback linearization method is applied to cancel the nonlinearities, and transform the dynamic system into a simple and linear subsystem. The system is transformed from abc frame to dq0 synchronous frame, to simplify the state feedback linearization law, and make the close-loop dynamics in the equivalent linear model. The controls improve the dynamic response, efficiency and stability of the three-phase photovoltaic grid system, under variable temperature, solar intensity, and load. The intelligent control of the nonlinear characteristic of the photovoltaic automatically varies the coefficients K p , K i , and K d under variable temperature and irradiation, and eliminates the oscillation. The simulation results show the advantages of the proposed intelligent control in terms of the correctness, stability, and maintenance of its response, which from many aspects is better than that of the PID controller.

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Symmetric and Asymmetric Double Gate MOSFET Modeling

Cited by 29 publications

References 10 publications

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part I: Interface Potentials Analytical Model

Linearizing and Control of a Three-phase Photovoltaic System with Feedback Method and Intelligent Control in State-Space

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