Across section, study of tick was conducted to identify types of tick species and determine the Prevalence of tick infestation in small ruminants in and around Dire Dawa Administrative council, Eastern Ethiopia. Collection and identification of the ticks were undertaken from November 2014 to May 2015. The overall prevalence of tick infestation in the study area was 278 (72.39% /384). All visible individual adult ticks were collected from the body of 196 goats and 188 sheep. The prevalence of tick infestation in goats and sheep was found to be 73.9% and 70.7%, respectively. In this study, eight species of ticks, which grouped under four genera, were identified. The most abundant species found in this study were Rhipicephalus pulchellus (34.1%), Amblyomma variegatum (24.5%), Rhipicephalus evertsievertsi (22.1%), Hyalomma truncatum (15.6%), Hyalomma marginatum rufipes (12.2%) and Amblyomma gemma (10.9 according to predominance. Hyalomma dromedari (4.2%) and Boophilus decoloratus was the minor species observed on both goats and sheep in the study area. The difference in prevalence of tick infestation was found statistically significant variation (P < 0.05) between the sex, age exception of Boophilus decoloratus and Hyalomma dromedari in all cases male ticks dominated females.

The models presented by Lu and Taur, [1], for lightly doped double gate and surround gate MOSFETs each require numerical solution of a transcendental equation. In this paper we present compact solutions for the equations based on the Lambert function, [2]. These solutions are shown to be accurate compared with exact numerical solutions.

The continuing down-scaling trend of CMOS technology has brought serious deterioration in the accuracy of the SPICE (Simulation Program with Integrated Circuit Emphasis) device models used in the design of chip functions. This is due to in part to hot electron and quantum effects that occur in modern nano-scale MOSFET devices [13,25,28,33,34]. The focus of this paper is on modeling quantum confinement effects based on the Density-Gradient (DG) model [6,9,14], for application in SPICE. Analytic 1-D quantum mechanical (QM) effects correction formulae for the MOSFET inversion charge and electrostatic potential are derived from the DG model using matched asymptotic expansion techniques. Comparison of these new models with numerical data shows good results.

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