Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

Chen, Shupeng; Wang, Shulong; Liu, Hongxia; Li, Wei; Wang, Qianqiong; Wang, Xing

doi:10.1109/ted.2017.2647809

Cited by 96 publications

(36 citation statements)

References 18 publications

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“…In order to understand the potential of DF-TFET in ultra-low-power applications, Table 2 shows a performance comparison of different TFETs with DF-TFET. Compared to TFETs with a traditional heavily doped p-n tunneling junction [6,20,[32][33][34][35], DF-TFET has obvious advantages on SS and switching ratio. This is due to the characteristics of DF-TFET by using electrostatically doping.…”

Section: Characteristics With Different Parameters and Analog/ Rf mentioning

confidence: 99%

“…But with the continuous progress of voltage scaling down, the unacceptable high-power consumption becomes a serious problem for modern ICs [1,2]. Benefit from the band-to-band tunneling mechanism, tunnel FET (TFET) with steep SS and low-power consumption bring a new solution to this problem and attracted lots of attention [3][4][5][6][7][8][9]. But the applications of conventional silicon-based TFETs are limited by the considerably low on-state current (I ON ), low switching ratio, severe ambipolar effect and large average subthreshold swing (SS) [1,7].…”

Section: Introductionmentioning

confidence: 99%

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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced. Through these methods, the DF-TFET with high on-state current, switching ratio of 12 orders of magnitude and no obvious ambipolar effect can be obtained. High κ material stack gate dielectric is induced to improve the off-state leakage, interface characteristics and the reliability of DF-TFET. Moreover, by using the dopingless channel and fin structure, the difficulties of doping process and asymmetric gate overlap formation can be resolved. As a result, the structure of DF-TFET can possess good manufacture applicability and remarkably reduce footprint. The physical mechanism of device and the effect of parameters on performance are studied in this work. Finally, on-state current (ION) of 58.8 μA/μm, minimum subthreshold swing of 2.8 mV/dec (SSmin), average subthreshold swing (SSavg) of 18.2 mV/dec can be obtained. With improved capacitance characteristics, cutoff frequency of 5.04 GHz and gain bandwidth product of 1.29 GHz can be obtained. With improved performance and robustness, DF-TFET can be a very attractive candidate for ultra-low-power applications.

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Section: Characteristics With Different Parameters and Analog/ Rf mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

et al. 2020

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“…The doping concentration and type of channel region are consistent with the source region and drain region. Meanwhile, the effects of the complex fabrication processes, random doping fluctuations and thermal costs can also be effectively avoided through the charge plasma concept [23].…”

Section: Introductionmentioning

confidence: 99%

Design and Investigation of the Junction-Less TFET with Ge/Si0.3Ge0.7/Si Heterojunction and Heterogeneous Gate Dielectric

et al. 2019

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To improve the on-state current and reduce the miller capacitance of the conventional junction-less tunneling field effect transistor (JLTFET), the junction-less TFET with Ge/Si0.3Ge0.7/Si heterojunction and heterogeneous gate dielectric (H-JLTFET) is investigated by the Technology Computer Aided Design (TCAD) simulation in this paper. The source region uses the narrow bandgap semiconductor material germanium to obtain the higher on-state current; the gate dielectric adjacent to the drain region adopts the low-k dielectric material SiO2, which is considered to reduce the gate-to-drain capacitance effectively. Moreover, the gap region uses the Si0.3Ge0.7 material to decrease the tunneling distance. In addition, the effects of the device sizes, doping concentration and work function on the performance of the H-JLTFET are analyzed systematically. The optimal on-state current and switching ratio of the H-JLTFET can reach 6 µA/µm and 2.6 × 1012, which are one order of magnitude and four orders of magnitude larger than the conventional JLTFET, respectively. Meanwhile, the gate-to-drain capacitance, off-state current and power consumption of the H-JLTFET can be effectively suppressed, so it will have a great potential in future ultra-low power integrated circuit applications.

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“…The tunneling area of the source-channel junction has increased by using structural engineering in such a way that the more carriers are tunneled in the channel region as introduced by L-shaped [23] and U-shaped TFET [21]. Kim et al [24], [25] proposed and experimentally demonstrated the L-shaped TFET for higher ION and smaller SS but at the cost of higher turn-ON voltages. In addition, the tunnel junction cross-sectional area can be increased depending on the gate and source overlaps, in contrast to conventional TFETs [26,27].…”

Section: Introductionmentioning

confidence: 99%

Source-All-Around Tunnel Field-Effect Transistor (SAA-TFET): Proposal and Design

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Elshorbagy

et al. 2019

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In this paper, a new source-all-around tunnel field-effect transistor (SAA-TFET) is proposed and investigated by using TCAD simulation. The tunneling junction in the SAA-TFET is divided laterally and vertically with respect to the channel direction which provides a relatively large tunneling junction area. An n+ pocket design is also introduced around the source to enhance tunneling rates and improve the device characteristics. In addition, the gate and n+ pocket region also overlap in the vertical and the lateral directions resulting in an enhanced electric field and, in turn, the ON-state current of the SAA-TFET is highly increased compared with the conventional TFET. Promising results in terms of DC (I ON , I OFF , ON/OFF current ratio and SS) and analog (cutoff frequency) performance are obtained for low (V DD = 0.5 V) and high (V DD = 1 V) supply voltages.

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Symmetric U-Shaped Gate Tunnel Field-Effect Transistor

Cited by 96 publications

References 18 publications

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance

Design and Investigation of the Junction-Less TFET with Ge/Si0.3Ge0.7/Si Heterojunction and Heterogeneous Gate Dielectric

Source-All-Around Tunnel Field-Effect Transistor (SAA-TFET): Proposal and Design

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