“…This is because of the large surface-area-to-volume ratio, excellent charge carrier transport performance and good crystallization ability shown by these types of nanostructures [ 6 , 7 ]. Thus far, heterostructure optoelectronic devices have been formed by depositing n-type metal oxides on various p-type substrates, including Si [ 8 , 9 , 10 , 11 ], GaN [ 12 , 13 , 14 ], NiO [ 15 ], Cu 2 O [ 16 , 17 , 18 , 19 ], graphene [ 20 , 21 ], boron-doped diamond (BDD) film [ 22 , 23 , 24 , 25 , 26 , 27 ], and organic material [ 28 ]. Among them, BDD acts as an excellent p-type conductive material for high-temperature, high-power and radiation-proof photoelectronic devices with its large band gap at room temperature (5.47 eV) and high thermal conductivity [ 29 ].…”