2022
DOI: 10.1016/j.jallcom.2022.165933
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Synergistic photocatalytic of CO2-to-CO conversion by 2D/1D Ti3C2Tx/p-BN heterojunction with interfacial chemical bonding

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Cited by 19 publications
(12 citation statements)
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“…Indeed, 5 wt% Ti 3 C 2 T x /p-BN has the highest fluorescence lifetime (29.82 ns) compared to p-BN (22.71 ns), showing that the excited charge carriers possess a longer lifetime. 172 For 5 wt% Ti 3 C 2 T x /p-BN, the E F of n-type semiconductors is equal to E fb and therefore the E F of p-BN (−0.89 eV) is lower than that of Ti 3 C 2 T x (−0.53 eV), resulting in the creation of a Schottky heterojunction. 172 The excited electrons in p-BN during the radiation can be transferred to the Ti 3 C 2 T x component, suppressing the recombination of electron–hole pairs in the composites.…”
Section: Composite Bn-based Heterojunctionsmentioning
confidence: 99%
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“…Indeed, 5 wt% Ti 3 C 2 T x /p-BN has the highest fluorescence lifetime (29.82 ns) compared to p-BN (22.71 ns), showing that the excited charge carriers possess a longer lifetime. 172 For 5 wt% Ti 3 C 2 T x /p-BN, the E F of n-type semiconductors is equal to E fb and therefore the E F of p-BN (−0.89 eV) is lower than that of Ti 3 C 2 T x (−0.53 eV), resulting in the creation of a Schottky heterojunction. 172 The excited electrons in p-BN during the radiation can be transferred to the Ti 3 C 2 T x component, suppressing the recombination of electron–hole pairs in the composites.…”
Section: Composite Bn-based Heterojunctionsmentioning
confidence: 99%
“…172 For 5 wt% Ti 3 C 2 T x /p-BN, the E F of n-type semiconductors is equal to E fb and therefore the E F of p-BN (−0.89 eV) is lower than that of Ti 3 C 2 T x (−0.53 eV), resulting in the creation of a Schottky heterojunction. 172 The excited electrons in p-BN during the radiation can be transferred to the Ti 3 C 2 T x component, suppressing the recombination of electron–hole pairs in the composites. 172 In fact, Ti 3 C 2 T x acts as a promising electron acceptor, followed by forming Ti–O–B bonds (Fig.…”
Section: Composite Bn-based Heterojunctionsmentioning
confidence: 99%
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