“…Indeed, 5 wt% Ti 3 C 2 T x /p-BN has the highest fluorescence lifetime (29.82 ns) compared to p-BN (22.71 ns), showing that the excited charge carriers possess a longer lifetime. 172 For 5 wt% Ti 3 C 2 T x /p-BN, the E F of n-type semiconductors is equal to E fb and therefore the E F of p-BN (−0.89 eV) is lower than that of Ti 3 C 2 T x (−0.53 eV), resulting in the creation of a Schottky heterojunction. 172 The excited electrons in p-BN during the radiation can be transferred to the Ti 3 C 2 T x component, suppressing the recombination of electron–hole pairs in the composites.…”