Synthesis and characterization of CIGS/ZnO film by spin coating method for solar cell application

Electrodeposition Technique to Fabrication CIGS using Pure Selenium and SeO2 as Selenium Source

“…Based on the data from Table 1, it was found that the selenium produced had a high purity, reaching 99.077%. This indicates that the research conducted did not exceed the stoichiometry of the reaction (1). Therefore, it will affect the peak in the XRD results with a high purity level, and the CIGS peak will be more dominant if using selenium dioxide as a source of selenium.…”

“…The use of pure selenium as a source of selenium in CIGS, in a Ga/(Ga+In) ratio of 0.067; this result did not meet the Ga/(Ga+In) ratio of the CIGS film, while the use of selenium dioxide as a source of selenium met the range of the Ga/(Ga+In) ratio. The CIGS band gap is about 1.01 eV to 1.60 eV [1], [5]. Bandgap CIGS can be obtained from the ratio Ga/(Ga+In) or GGI through the following equation [24]:…”

“…CIGS (Copper, Indium, Gallium, Selenium) are solar cells formed from the combined inorganic type-P compounds, which are included in the I-III-VI group in the periodic table [1][2] [3]. CIGS have compatibility used as solar cells because of high light absorption, can last a long time, and feasibility for large scale [4].…”

“…Which produces a uniform microstructure and good electrical properties, but this technique requires vacuum conditions and always maintains air pressure conditions under certain conditions. Otherwise, non-vacuum methods can be performed at room temperatures, such as electrodeposition [9], spin coating [1], and spray pyrolysis [10]. Among these techniques, electrodeposition is the most preferred method because it is simple, does not require vacuum equipment, thus reducing the cost of production, is stable, and has also been proven to produce CIGS absorbing layers in previous studies [4].…”

Effect of Temperature to Fabrication Cigs Solar Cell Using the Sputtering Method

“…Copper Indium Gallium Selenide (CIGS) is a member of the chalcopyrite I-III-IV2 group of semiconductors used as light-absorbing agents in solar cells [7]. Copper Indium Gallium Selenide (CIGS) has a direct band gap of 1.04-3.50 eV [8], a high absorption coefficient, moderate surface recombination rate and good radiation properties [9]. The efficiency of CIGS solar cells on a lab scale is quite high at 20%.…”