Synthesis and microstructural characterisation of reactive RF magnetron sputtering AlN films for surface acoustic wave filters

ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient

“…Furthermore, transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM) analysis have shown that AlN films present a columnar structure and each column in this structure consists of only one single grain [12]. The grain column size was estimated, from these observations, at 30 nm that is in concordance with the low surface roughness measured by AFM.…”

“…The AlN film thickness was fixed to 4.7 µm. The experimental growth conditions have been described elsewhere [12]. The microstructural characterisation shows a high (002) preferred orientation of AlN thin film.…”

Two-step method for the deposition of AlN by radio frequency sputtering

“…All these features make AlN a suitable semiconductor for application in optical components in the ultraviolet spectral region [2,3], surface acoustic wave devices [4], micro-electro-mechanical systems [5] and coating layers. AlN is also widely used as buffer layer for the growth of GaN, in order to reduce the lattice mismatch, stabilize the metal polarity and prevent unwanted reactions between GaN and the substrate [refs.…”

Deposition Characteristics of AlN Thin Film Prepared by the Dual Ion Beam Sputtering System

“…7 A variety of deposition methods have been used to prepare AlN films, including metal-organic chemical vapor deposition (MOCVD) 8 and physical vapor deposition. [9][10][11][12][13] Ion beam sputtering deposition 14 and ion beam-assisted deposition 15,16 have also been used.…”