2005
DOI: 10.1016/j.diamond.2005.01.002
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ZnO/AlN/diamond layered structure for SAW devices combining high velocity and high electromechanical coupling coefficient

Abstract: Authorship statement : the submission of the manuscript has been approved buy all coauthors Prime Novelty:In this work we propose a new Surface acoustic wave structure (ZnO/AlN/diamond) leading to perform SAW devices combining high acoustic velocity and high electromechanical coupling coefficient. Theoretical as well as experimental results demonstrate the potentiality of this new structure.

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Cited by 57 publications
(21 citation statements)
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“…Recently, much attention has been paid to high quality piezoelectric ZnO films for SAW devices with operation frequencies higher than 1 GHz, whereas even greater frequencies (superior to 2.5 GHz) tend to push the limits of conventional photolithography [8] . The use of ZnO based on diamond as SAW substrates [8][9][10][11][12][13][14] offers an attractive means for relaxation of the lithographic criteria since diamond has the highest stiff coefficient and sound velocity. SAW devices have been reported based on ZnO/ diamond/Si layered structures with a diamond layer of 10-100 μm deposited by chemical vapour deposition (CVD) technique [9][10][11][12][13][14] .…”
mentioning
confidence: 99%
“…Recently, much attention has been paid to high quality piezoelectric ZnO films for SAW devices with operation frequencies higher than 1 GHz, whereas even greater frequencies (superior to 2.5 GHz) tend to push the limits of conventional photolithography [8] . The use of ZnO based on diamond as SAW substrates [8][9][10][11][12][13][14] offers an attractive means for relaxation of the lithographic criteria since diamond has the highest stiff coefficient and sound velocity. SAW devices have been reported based on ZnO/ diamond/Si layered structures with a diamond layer of 10-100 μm deposited by chemical vapour deposition (CVD) technique [9][10][11][12][13][14] .…”
mentioning
confidence: 99%
“…In the calculations, the following values are used: the wave velocity in silicon v Si = 4900 m/s, and the density of silicon ρ Si = 2.329 g/cm 3 . Figure 3 shows that the wave velocity of an AlN/diamond structure is greater than the velocity in a single AlN layer (v AlN = 5600 m/s, [6]), or AlN/Si structure. The increase of the wave velocity enables higher operating frequencies without submicron electrode manufacturing and higher sensor sensitivities.…”
Section: Resultsmentioning
confidence: 99%
“…In the same figure, the corresponding function for ST quartz is presented ( points). According to (6), AlN/diamond based sensors have approximately 2.3 times better mass sensitivity than quartz-based sensors for the same wavelength (5). Relative frequency changes versus gas concentrations of ethanol and CO sensor are calculated using (5) and presented in Fig.…”
Section: Resultsmentioning
confidence: 99%
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“…Recently, multilayered substrates are used for the wave velocity increase [Ahmadi et al, 2004]. The highest velocities are achieved when the piezoelectric material is placed on the top of the diamond layer, due to its highest acoustic wave velocity [Assouar et al, 2000;Benetti et al, 2004;Benetti et al, 2005;Besmaine et al, 2008;Hakiki et al, 2005;Mortet et al, 2008;Jian et al, 2008;Shikata et al, 2005]. Several piezoelectric materials in combination with diamond/silicon substrates have been investigated theoretically and experimentally.…”
Section: Introductionmentioning
confidence: 99%