Synthesis and Optical Absorption Properties of Copper Oxide Nanoparticles for Applications in Transparent Surface Coatings and Solar Cells

Samanta, Pijus Kanti; Das, Mausumi; Hati, R.; Patra, Manoj Kumar; Khatun, A.; Patra, Sankar Narayan; Jana, Sunirmal; Kar, B. S.; Mandal, S. C.; Mandal, Animesh; Aich, Debasish; Saha, Sudeshna; Kamilya, Tapanendu; Mishra, Soumya Ranjan

doi:10.21272/jnep.9(6).06028

Cited by 2 publications

(2 citation statements)

References 4 publications

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“…Debanatth et al, 58 reported the bandgap energy of ZnO at low temperature (3.63 eV) and Evstropiev et al 59 measured ZnO samples with bandgap energy values around 3.93-4.13 eV. According to Samanta et al 60 and Miri et al, 61 the bandgap energy enhancement occurs due to the quantum confinement of carriers by the small dimensions of the nanocrystals. The Urbach's tail energy is usually estimated to evaluate crystallinity and disorder on materials.…”

Section: Resultsmentioning

confidence: 99%

Role of Ammonia on the Growth Mechanism of ZnO Films Deposited at Ambient Temperature

Rosado-Mendoza¹,

Casanova²,

Oliva³

2020

ECS J. Solid State Sci. Technol.

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Zinc oxide (ZnO) was synthesized by chemical bath deposition (CBD) technique at room temperature. The species distribution diagrams, and the solubility curves were used for determining the better chemical conditions required to evaluate the ammonia role for obtaining high quality ZnO films. ZnSO4, NH4NO3, and KOH were the chemical reagents used for the bath. Three different pH zones between 9 and 13 were selected to synthesize the films. X-ray diffraction analysis showed that the pH value of the chemical bath and the ammonia concentration influences on the structure crystalline of the deposited films. Three different surface morphologies were obtained according to the pH of the solution. The bandgap energy values measured in the deposited films range from 3.52 eV to 3.77 eV. The estimated Urbach’s tails energy values confirmed that samples exhibited high crystallinity. By controlling the ammonia concentration and pH, deposition of high quality ZnO films can be obtained at room temperature.

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Section: Resultsmentioning

confidence: 99%

Role of Ammonia on the Growth Mechanism of ZnO Films Deposited at Ambient Temperature

Rosado-Mendoza¹,

Casanova²,

Oliva³

2020

ECS J. Solid State Sci. Technol.

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“…Among various metal oxides, Zinc oxide (ZnO) which is one of the most important materials in the synthesis of solar cell applications has good optical properties which can observe in the fewer defects and less disorder. The semiconductor compounds as a ZnO has a n-type good electrical conductivity with a direct energy wide band gap of 3.37 eV at room temperature, a large exciton binding energy ( 60 meV) [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study the Calculation of the Optical Gap Energy and Urbach Energy in Undoped and Indium Doped ZnO Thin Films

Benramache¹,

Benhaoua²,

Belahssen³

2016

J. Nano- Electron. Phys.

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In the present paper, we investigated a new model by theoretical methods; it is based on correlation from the experimental data's which was used in the calculation the optical gap energy and Urbach energies. These data's were taken from papers previously published. The choice ZnO thin films and spray only to compare our models with the Indium doping. From obtained relations found that the experimental data and theoretical calculation are in qualitative, which were supported with the variation of solution molarities and Indium doping. We have obtained a high correlation coefficient in the estimation of the band gap energy is higher than 0.96 with compare of Urbach energy is changed from 0.84 to 0.89. The measurements by these new models have agreed with minimum relative errors, it is found in the calculations of optical band gap does not exceed 4 %, and for Urbach energy are smaller than 20 and 10 % for undoped and Indium doped ZnO films, respectively. So that the best estimation was found at the Indium doped ZnO thin with maximum enhancement of minimum errors were limited to 3.5 and 9.7 % for the band gap and the Urbach energies, respectively. The decreases in the relative errors of undoped to Indium doped films can be explained by the fewer defects and less disorder.

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Synthesis and Optical Absorption Properties of Copper Oxide Nanoparticles for Applications in Transparent Surface Coatings and Solar Cells

Cited by 2 publications

References 4 publications

Role of Ammonia on the Growth Mechanism of ZnO Films Deposited at Ambient Temperature

Role of Ammonia on the Growth Mechanism of ZnO Films Deposited at Ambient Temperature

A Comparative Study the Calculation of the Optical Gap Energy and Urbach Energy in Undoped and Indium Doped ZnO Thin Films

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