Synthesis and photocatalytic performance of Ag-loaded β-Bi2O3 microspheres under visible light irradiation

Temperature-induced phase changes in bismuth oxides and efficient photodegradation of phenol and p -chlorophenol

“…2. It can be clearly seen the absorption intensity of Bi 4 O 7 was [37]. When the calcination temperature was increased from 300 • C to 330 • C, a phase transition (␤-Bi 2 O 3 -␣-Bi 2 O 3 ) occurred, and ␣-Bi 2 O 3 remained its phase structure even if the temperature was up to 500 • C. Its ab located in 430 nm, corresponding to the band gap energy of 2.88 eV which was quite comparable to those were reported [38].…”

Enhanced photocatalytic performance: a β-Bi2O3 thin film by nanoporous surface

“…The β-Bi 2 O 3 showed narrower band gap with better light harvesting ability in the visible region, which resulted in a higher photocatalytic activity. Zhu et al [14] determined that 2.0 wt% Ag-doped β-Bi 2 O 3 showed the best photo-activity by degradation of Rhodamine B. Ag/β-Bi 2 O 3 structure was good for the migration of the electronhole pairs, resulting in a higher visible light photocatalytic activity. Qiu et al [15] investigated the growth conditions of nanowires systematically.…”

Morphology-controlled growth of BiVO4 crystals by hydrothermal method assisted with ethylene glycol and ethylenediamine and their photocatalytic activity

“…It is convenient to use optical band gap energy (E g ) to evaluate the optical absorption of a material. As for crystalline semiconductors, the optical absorption near the band edge follows the equation: (ahn) 2 ¼ A(hnÀE g ) n , where a e adsorption coefficient, h e Plank constant, n e light frequency, E g e band gap, and A e constant, respectively [22]. The n value depends upon the characteristics of the transition in a semiconductor: n ¼ 1 for direct transition and n ¼ 4 for indirect transition.…”