Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells

Abstract

Hexagonal boron nitride (h-BN) has emerged as an important extreme bandgap semiconductor as well as a two-dimensional material. Achieving the ability for tuning the optoelectronic properties through alloying and heterojunction will further expand the applications of h-BN. By utilizing h-BN epilayer as a template, the synthesis of BN-rich B 1−x Ga x N alloys and quantum wells crystalized in the hexagonal phase has been demonstrated for the first time by metal organic chemical vapor deposition. The incorporation of Ga tends to enhance the conductivity. A blue shift in the band-edge emission upon the formation of h-BN/BGaN/BN QW has been observed, indicating the feasibility for heterojunction formation.

Effects of an anisotropic parabolic potential and Coulomb's impurity potential on the energy characteristics of asymmetrical semi-exponential CsI quantum wells

“…Compared with other low-dimensional structures, quantum wells (QWs) have higher quantum efficiency, so they are used to make light-emitting devices and photodetector devices. Due to the broad development prospects of QWs in the field of optoelectronics, the study of polarons in QWs of various structures has made considerable progress [1][2][3][4][5][6]. The optical properties of single QW [7], multiple QW [8] and doped QW [9] were studied respectively.…”