2014
DOI: 10.1016/j.saa.2014.05.035
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Synthesis, characterization and dielectric properties of SnO2 thin films

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Cited by 66 publications
(18 citation statements)
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“…However, the post-deposition annealing was found to increase the crystallite size. Ali Yıldırım et al [13] and Yu et al [17] have reported a similar improvement in the crystallite size of SnO 2 after annealing. The highest crystallite size reported in these two cases was about 20 nm.…”
Section: Structural Analysismentioning
confidence: 66%
See 1 more Smart Citation
“…However, the post-deposition annealing was found to increase the crystallite size. Ali Yıldırım et al [13] and Yu et al [17] have reported a similar improvement in the crystallite size of SnO 2 after annealing. The highest crystallite size reported in these two cases was about 20 nm.…”
Section: Structural Analysismentioning
confidence: 66%
“…Tin oxide (SnO 2 ) is one of such earth abundant and nontoxic IV-VI material known for its transparency in visible region and a wide bandgap (3.5 to 4.0 eV) [1]. Due to its high absorption co-efficient in UV region and n-type conductivity, SnO 2 has many potential applications such as gas sensors [2], window layers in solar cells, photodetectors [3][4][5] etc The SnO 2 nano materials including thin films have been prepared by several physical and chemical routes such as chemical bath deposition [6], dip coating [7], sol-gel [8], thermal evaporation [9], Spray pyrolysis [10] pulsed laser deposition (PLD) [11], SILAR [12][13][14] etc Among these techniques, SILAR has proved to be a simple and cost-effective route for the synthesis of good quality SnO 2 films as it does not require complex setups and vacuum environment [15]. Several efforts have been made in the past to synthesize SnO 2 using SILAR and other techniques.…”
Section: Introductionmentioning
confidence: 99%
“…where E fb is the flat band potential and E, q, A, ε, e 0 and N d are the external applied potential, the elementary charge, the area of the metal contacts, the dielectric constant, the vacuum permittivity, and the carrier concentration, respectively. The optical static dielectric constant ε is equal to 7.1 [31] or 10 [32]. The flat potential E fb is obtained as −0.37, −0.16 V versus Ag/AgCl for Sn-1 and Sn-2, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The various forms of SnO 2 -based nanostructures are continuously investigated for their optical and electrical properties [19][20][21][22][23]. In 2007, an international research team from Turkey and Israel examined the optical properties of thin SnO 2 films produced by the filtered vacuum arc deposition (FVAD) method [24].…”
Section: Introductionmentioning
confidence: 99%