A high-current annealing technique is used to fabricate nanogaps and hybrid diamond/graphite structures in boron-doped nanocrystalline diamond films. Nanometer-sized gaps down to $1 nm are produced using a feedback-controlled current annealing procedure. The nanogaps are characterized using scanning electron microscopy and electronic transport measurements. The structural changes produced by the elevated temperature, achieved by Joule heating during current annealing, are characterized using Raman spectroscopy. The formation of hybridized diamond/graphite structure is observed at the point of maximum heat accumulation. V C 2012 American Institute of Physics.[http://dx.doi.org/10.1063/1.4766346] During the last decade, carbon-based materials like diamond, 1 graphene, 2 and carbon nanotubes (CNTs) 3 have been extensively studied due to their outstanding physical properties and potential applications. Consequently, hybrid structures combining the advantages of different allotropes of carbon into one structure have slowly gained interest. For instance, hybrid diamond/graphite structures can be relevant in molecular electronic applications because they benefit from both the robustness of sp 3 bonds and the flexibility of sp 2 hybridization for functionalizing with a large variety of molecules. Hybrid structures such as diamond/graphite nanowires, 4 diamond/graphite nanoflakes, 5 and diamond/CNTs 6 composites have been reported in recent years.So far these hybrid structures have been synthesized using the conventional plasma-based chemical vapor deposition (CVD) technique. This technique, however, does not allow in situ fabrication of hybrid structures in specific domains. The current annealing technique, 7 on the other hand, has proven to be effective to induce structural transformations and even to fabricate nanometer-sized gaps. For example, the transformation of amorphous carbon layers into graphene 8 and restructuring of CNTs 9 have been reported using this technique. Furthermore, high-current annealing has also been used to fabricate nanogaps in few-layer graphene 10 and CNTs. 11 High-current annealing can therefore be a promising technique to fabricate nanogaps and hybrid structures also in diamond-based devices, which has not been explored yet. Nanocrystalline diamond 12 films are unique due to their close resemblance to single crystal diamond for many properties, the flexibility to grow on different substrates, and the control over their electrical properties via boron doping (ranging from wide bandgap insulator to semiconductor to superconductor behavior). Boron-doped nanocrystalline diamond (B:NCD) films have been implemented as an electrochemical electrode, 13 sensor, 14 and even superconducting quantum interference device (SQUID). 15 However, engineering B:NCD for using it as an electrode material for molecular electronics applications has been a big challenge because the strong covalent carbon network of diamond requires an unconventional approach to structure it.In this letter, we introduce a technique ...