Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

Rozhavskaya, M. M.; Lundin, W. V.; Lundina, E. Yu.; Sakharov, A. V.; Troshkov, S. I.; Smirnov, Alexander; Davydov, V. Yu.

doi:10.1134/s1063785014050125

Cited by 5 publications

(4 citation statements)

References 15 publications

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“…Over the past few years, various metal foils (e.g., Ti, Ta) [27,91] and metal-coated substrates (e.g., Al, Pt, Ti, Mo) [28,29,[92][93][94][95][96][97] have been investigated for the growth of AlGaN nanowire UV LED structures, motivated by the excellent physical properties of metals, including thermal and electrical conductivity, light reflection, as well as flexibility. In addition, by coating a metal layer to Si substrate one can also reduce the formation of SiN x .…”

Section: Metal Foils and Metal-coated Substratesmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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In this paper, we discuss the recent progress made in aluminum gallium nitride (AlGaN) nanowire ultraviolet (UV) light-emitting diodes (LEDs). The AlGaN nanowires used for such LED devices are mainly grown by molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD); and various foreign substrates/templates have been investigated. Devices on Si so far exhibit the best performance, whereas devices on metal and graphene have also been investigated to mitigate various limitations of Si substrate, e.g., the UV light absorption. Moreover, patterned growth techniques have also been developed to grow AlGaN nanowire UV LED structures, in order to address issues with the spontaneously formed nanowires. Furthermore, to reduce the quantum confined Stark effect (QCSE), nonpolar AlGaN nanowire UV LEDs exploiting the nonpolar nanowire sidewalls have been demonstrated. With these recent developments, the prospects, together with the general challenges of AlGaN nanowire UV LEDs, are discussed in the end.

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Section: Metal Foils and Metal-coated Substratesmentioning

confidence: 99%

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Zhao

et al. 2020

Micromachines

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“…25 To some extent related is also a report in which the growth of GaN NWs by metal organic vapor phase epitaxy on sapphire and GaN was induced by a thin film of Ti. 26 However, in that case it was not shown that the metal film really acted as a substrate. Here, we present a detailed study of the NW nucleation conditions and the resulting GaN crystal quality.…”

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confidence: 99%

“…As a matter of fact, the growth of GaN NWs on TiN by MBE has been noted before when using TiN as a mask for selective-area growth but was considered parasitic and not investigated further . To some extent related is also a report in which the growth of GaN NWs by metal organic vapor phase epitaxy on sapphire and GaN was induced by a thin film of Ti . However, in that case it was not shown that the metal film really acted as a substrate.…”

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confidence: 99%

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

et al. 2015

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Vertical GaN nanowires are grown in a self-induced way on a sputtered Ti film by plasma-assisted molecular beam epitaxy. Both in situ electron diffraction and ex situ ellipsometry show that Ti is converted to TiN upon exposure of the surface to the N plasma. In addition, the ellipsometric data demonstrate this TiN film to be metallic. The diffraction data evidence that the GaN nanowires have a strict epitaxial relationship to this film. Photoluminescence spectroscopy of the GaN nanowires shows excitonic transitions virtually identical in spectral position, line width, and decay time to those of state-of-the-art GaN nanowires grown on Si. Therefore, the crystalline quality of the GaN nanowires grown on metallic TiN and on Si is equivalent. The freedom to employ metallic substrates for the epitaxial growth of semiconductor nanowires in high structural quality may enable novel applications that benefit from the associated high thermal and electrical conductivity as well as optical reflectivity.

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“…The growth of GaN NWs on these nanostructured metal layers was first reported by Rozhavskaya et al 73 A 10-to 30-nm continuous Ti layer was deposited on a sapphire substrate, and GaN NWs were then grown using the MOCVD technique, thus achieving a high growth rate of 10 μm∕ min. PA-MBE growth of GaN on a thin TiN layer on a sapphire substrate [ Fig.…”

Section: Metal Preorienting Interlayer (Metal Thin Film) On Various Smentioning

confidence: 99%

Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

et al. 2018

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Synthesis of GaN nano- and microwire crystals induced by a titanium nanolayer

Cited by 5 publications

References 15 publications

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects

Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices

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