Synthesis of p-type ZnO films

Ryu, Yungryel; Zhu, Shen; Look, David C.; Wróbel, J.; Jeong, Hakyung; White, H. W.

doi:10.1016/s0022-0248(00)00437-1

Cited by 466 publications

(192 citation statements)

References 13 publications

Supporting

Mentioning

186

Contrasting

Unclassified

Order By: Relevance

“…Unfortunately our experiments cannot settle the interesting issue whether substitutional As on oxygen sites (As O ), as is often assumed [3,4,8], or As Zn −2V Zn complexes, as was suggested by Limpijumnong et al [13,14], are responsible for the acceptor action in As-doped ZnO. The fact that implanted As prefers the substitutional Zn sites is clearly a strong argument in favor of the As Zn −2V Zn model.…”

Section: Relevance Of Current Results With Respect To the Acceptor Momentioning

confidence: 67%

“…In the case of the technologically promising II-VI compound ZnO, besides N [1,2] the heavy group-V elements P [1,2], As [2][3][4][5][6][7][8][9], and Sb [10][11][12] have been reported in the literature as possible p-type dopants. However, there is an ongoing debate whether for P, As, and Sb the p-type character results from these impuritities simply replacing O atoms, thus acting as simple "chemical" dopants [3,4,8], or is due to the formation of more complicated defect complexes [9,[12][13][14]. The relative sizes of Zn, O and P, As, or Sb atoms favour incorporation of the heavy group-V elements on cation sites.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

View full text Add to dashboard Cite

We have determined the lattice location of ion implanted As in ZnO and GaN by means of conversion electron emission channeling from radioactive 73 As. In contrast to what one might expect from its nature as a group V element, we find that As does not occupy substitutional O sites in ZnO but in its large majority substitutional Zn sites. Arsenic in ZnO is thus an interesting example for an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. In contrast, in GaN the preference of As for substitutional cation sites is less pronounced and about half of the implanted As atoms occupy Ga and the other half N sites. Apparently, the smaller size-mismatch between As and N and the chemical similarity of both elements make it feasible that As partly substitutes for N atoms.

show abstract

Section: Relevance Of Current Results With Respect To the Acceptor Momentioning

confidence: 67%

Section: Introductionmentioning

confidence: 99%

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

et al. 2007

View full text Add to dashboard Cite

show abstract

“…Several groups have found success with N doping, 10,11,13,14,16,[18][19][20][22][23][24][25]28,29 which is not surprising since the ionic radius of N is about that of O, so that N should be quite soluble as N O . On the other hand, there are only a few reports of p-type ZnO from P 21,27,30 or As 12,26 doping, and almost no reports involving any of the other possible dopants. In this letter, we discuss an evaporation/ sputtering method of creating As-doped, p-type ZnO.…”

mentioning

confidence: 99%

As-doped p-type ZnO produced by an evaporation∕sputtering process

Renlund¹,

Burgener²,

Sizelove

2004

Applied Physics Letters

277

115

View full text Add to dashboard Cite

Strongly p-type ZnO is produced by the following sequence of steps: (1) evaporation of Zn3As2 on a fused-quartz substrate at 350°C; and (2) sputtering of ZnO with substrate held at 450°C. The electrical characteristics include: resistivity of 0.4Ωcm, a mobility of 4cm2∕Vs, and a hole concentration of about 4×1018cm−3. This resistivity is among the best (lowest) ever reported for p-type ZnO. Secondary-ion mass spectroscopic analysis gives an average As concentration about 5×1019cm−3, and a simple one-band fit of the temperature-dependent mobility curve yields an acceptor concentration of about 9×1019cm−3. This is strong evidence that the p-type dopant involves As, although it is not clear whether the acceptor is simply AsO or the recently suggested AsZn−2VZn.

show abstract

“…In addition, GaAs can be used as a p-type dopant source in ZnO film, which is essential to application of ZnO for optoelectronic devices [5]. However, because of the problems related to thermal stability and stress due to large lattice mismatch of about 19 % between ZnO and GaAs, a few studies of ZnO thin film on GaAs have been reported [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Effects of As Doping on Properties of ZnO Films

et al. 2001

View full text Add to dashboard Cite

A series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

show abstract

Synthesis of p-type ZnO films

Cited by 466 publications

References 13 publications

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

Arsenic in ZnO and GaN: Substitutional Cation or Anion Sites?

As-doped p-type ZnO produced by an evaporation∕sputtering process

Effects of As Doping on Properties of ZnO Films

Contact Info

Product

Resources

About