Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up

Boughaba, S.; Sproule, G. I.; McCaffrey, J. P.; Islam, Muhammad Monirul; Graham, M. J.

doi:10.1016/s0040-6090(99)00703-8

Cited by 47 publications

(19 citation statements)

References 35 publications

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“…[6] There are many different methods for the deposition of tantalum oxide as a film such as: RF sputtering, [7][8][9] solgel, [6] chemical vapor deposition (CVD) [10] and pulsed laser deposition (PLD). [11,12] The Schottky diode has been reported as a small and effective device that as a gas sensitive layer is deposited between the metal and the substrate, the sensitivity is increased towards sensing a particular gas species. [13][14][15] Previously, Comini et al [16] utilized tantalum and its oxide as a dopant on titania based films.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Chen

et al. 2010

Procedia Engineering

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In this paper, we fabricated Pt/tantalum oxide (Ta 2 O 5 ) Schottky diodes for hydrogen sensing applications. Thin (4 nm) layer of Ta 2 O 5 was deposited on silicon (Si) and silicon carbide (SiC) substrates by radio frequency (RF) sputtering technique. We compared the performance of these sensors at different elevated temperatures of 100°C and 150°C. At these temperatures, the sensor based on SiC exhibited a larger sensitivity while the sensor based on Si exhibited a faster response toward hydrogen gas. We discussed herein, the responses exhibited by the Pt/Ta 2 O 5 based Schottky diodes demonstrated a promising potential for hydrogen sensing applications.

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Section: Introductionmentioning

confidence: 99%

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Chen

et al. 2010

Procedia Engineering

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“…An in-line deposition system has also been used to create films containing copper, indium, gallium and selenium [16]. The pulsed laser deposition of tantalum pentoxide films has been scaled up to larger areas through the use of a rotating substrate [17].…”

Section: Introductionmentioning

confidence: 99%

Large-scale initiated chemical vapor deposition of poly(glycidyl methacrylate) thin films

Gupta

Gleason

2006

Thin Solid Films

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“…2 In consequence, a number of compatible methods such as rf sputtering, thermal oxidation of Ta film, a variety of chemical-vapor deposition techniques, ionbeam deposition, atomic layer deposition, pulsed laser deposition have been developed to fabricate Ta 2 O 5 films. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Investigations on the production methodology continue in competition with alternative solution and each method exhibits advantages and disadvantages in terms of, mainly, electrical properties that are essential for DRAM applications. It is not yet clear which method will be chosen as the best one with respect to the storage capacitor applications because each fabricated method strongly affects the structural and electrical properties of the Ta 2 O 5 .…”

Section: Introductionmentioning

confidence: 99%

Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation

Atanassova

Aygün

Turan

et al. 2006

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films J. Appl. Phys. 112, 103306 (2012) Tantalum pentoxide ͑Ta 2 O 5 ͒ thin films ͑20-50 nm͒ have been grown by 1064 nm Nd:YAG laser oxidation of Ta film deposited on Si. The chemical bonding, structure, and optical properties of the films have been studied by Fourier transform infrared spectroscopy, x-ray diffraction, and reflectance measurements at normal light incidence in the spectral range of 350-800 nm. The effect of the substrate temperature ͑250-400°C͒ during oxidation and its optimization with respect to the used laser beam energy density ͑3.2-3.4 J / cm 2 per pulse͒ is discussed. It is established that the substrate temperature is a critical factor for the effectiveness of the oxidation process and can be used to control the composition and amorphous status of the films. The film density explored by refractive index is improved with increasing film thickness. The refractive index of the layers grown under the higher laser beam energy density and at substrate temperature of 350-400°C was found to be close to the value of bulk Ta 2 O 5 . The films are amorphous at substrate temperature below 350°C and possessed an orthorhombic ͑␤-Ta 2 O 5 ͒ crystal structure at higher temperatures. The thinner layers crystallize at a little higher temperature.

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Synthesis of tantalum pentoxide films by pulsed laser deposition: material characterization and scale-up

Cited by 47 publications

References 35 publications

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Hydrogen gas sensing properties of Pt/Ta2O5 Schottky diodes based on Si and SiC substrates

Large-scale initiated chemical vapor deposition of poly(glycidyl methacrylate) thin films

Structural and optical characteristics of tantalum oxide grown by pulsed Nd:YAG laser oxidation

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