Synthesis of α-SiC from tetramethylsilane by chemical vapor deposition at high temperature

Abstract

Tetramethylsilane (TMS) is a common liquid-phase precursor that is used in the synthesis of β-SiC by chemical vapor deposition (CVD). At temperatures above 1500 °C, however, it has been shown that C is also formed together with SiC. In this study, based on thermodynamic modeling, we report on the successful synthesis of single-phase SiC with no evidence of the inclusion of C from TMS through CVD at temperatures over 1900 °C. X-ray diffraction data showed that α-SiC phases are formed at temperatures over 2000 °C. On the basis of these results, TMS can be used as a precursor for α-SiC synthesis.

High-Temperature Chemical Vapor Deposition for SiC Single Crystal Bulk Growth Using Tetramethylsilane as a Precursor

“…The inserted image of Figure a is an optical microscopic image showing the particles of the green deposits. In our previous study, while large amounts of 3C-SiC were formed at temperatures lower than 1800 °C, α-SiC became abundant with increasing temperatures . In the processing conditions of the current study, the deposits were characterized as a mixture of 4H-, 6H-, and 15R-SiC by XRD, as shown in Figure b, which was consistent with results reported in a previous study .…”

“…In our previous study, while large amounts of 3C-SiC were formed at temperatures lower than 1800 °C, α-SiC became abundant with increasing temperatures . In the processing conditions of the current study, the deposits were characterized as a mixture of 4H-, 6H-, and 15R-SiC by XRD, as shown in Figure b, which was consistent with results reported in a previous study . Compared to XRD, micro-Raman spectroscopy provides a much better spatial resolution of ∼1 μm, which allows individual particles to be characterized.…”

“…In our previous study, however, TMS was proposed as a source for α-SiC, via thermodynamic calculations . The synthesis of stoichiometric α-SiC particles was then experimentally demonstrated via the HTCVD method using TMS as a precursor . In this work, in an extension of a previous work, we examined the feasibility of TMS as a source for SiC bulk crystal through the HTCVD method.…”

One-step growth of multilayer-graphene hollow nanospheres via the self-elimination of SiC nuclei templates

“…The induction heating was adjusted in the HTCVD process to control the growth temperature with graphite susceptors. More detailed information about the HTCVD is given in our previous reports 33 , 37 , 38 , 47 . TMS (99.9%) (Sigma-Aldrich Co.) and H 2 (99.999%) were used as a source precursor and a carrier gas, respectively.…”

“…In a HTCVD process, mass production is possible because the sources, such as the gas species, are continuously supplied to the HTCVD chamber during the growth process. Moreover, the ratio of C to Si can be easily controlled via the flow of the source and carrier gases and the design of susceptors 33 , 37 , 38 . This aspect is important because controlling the Si/C ratio determines whether SiC single crystals can be obtained without excess carbon.…”