Synthesis of β-Ga2O3 nanorods by catalyzed chemical vapor deposition and their characterization

Abstract

b-Ga 2 O 3 nanorods have been synthesized by chemical vapor deposition using CaF 2 as dispersant and Ni 2? ions as catalyst. The composition, crystal structure, morphology, and optical property were characterized. X-ray diffraction data indicate the product to be high purity b-Ga 2 O 3 . The nanorods are 40-100 nm in diameter and about several microns in length and present a core-shell structure. A broad and strong emission band ranging from 300 to 650 nm exists with four Gaussian bands centered at 357 (UV), 420 (blue), 475 (dark blue), and 529 nm (green). Growth of b-Ga 2 O 3 nanorods agrees with the vapor-solid growth mechanism.

Effect of Temperature on the Structural and Optical Properties of Ga2O3Thin Films Grown on m-plane Sapphire Substrates by Low-Pressure MOCVD

“…β-Ga 2 O 3 belongs to the monoclinic system, and its unit cell contains two units, GaO 6 octahedron and GaO 4 tetrahedron, which belong to edge sharing and angle sharing, respectively. 19 The Raman activation mode of β-Ga 2 O 3 is divided into three groups: 770-500 cm −1 , 480-310 cm −1 and 200 cm −1 below. They represent the high-frequency stretching and bending phonon frequencies of the GaO 4 tetrahedron, the intermediate frequency deformation of the GaO 6 octahedron and the tetrahedron-octahedral chain low frequency vibration and translation, 12 respectively.…”