Systematic study of work function engineering and scavenging effect using NiSi alloy FUSI metal gates with advanced gate stacks

Kim, Y.H.; Cabral, C.; Gusev, Evgeni; Carruthers, R.; Gignac, Lynne; Gribelyuk, M.; Cartier, E.; Zafar, Sufi; Copel, M.; Narayanan, V.; Newbury, J.; Price, B.; Acevedo, J.; Jamison, P.; Linder, B.; Natzle, W.; Cai, Jin; Jammy, R.; Ieong, M.

doi:10.1109/iedm.2005.1609432

Cited by 22 publications

(22 citation statements)

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“…However, a somewhat larger NMOS NiSi Φ m of 4.28 ± 0.01 eV was obtained on HfO 2 , which could be due to the influence of the underlying dielectric on gate Φ m [12]. Still, this value is comparable to other modulated NMOS NiSi Φ m on Hf-based dielectrics using different modulation techniques such as Al implantation (∼4.27 eV) [3] or Ni-Al alloying (∼4.25-4.30 eV) [6]. No significant difference in fixed charge densities (≤∼ 3 × 10 11 cm −2 ) was observed from the V FB versus T ox plots.…”

Section: Resultsmentioning

confidence: 59%

“…However, the effectiveness of this method is limited by the difficulty in obtaining Si bandedge Φ m and the inability to achieve significant Φ m modulation on Hf-based high-k dielectrics. Alternatively, NiSi and Ni-rich silicides have been investigated for dual gate integration in a conventional CMOS flow [4]- [6]. Yet, the small Φ m difference of ∼0.…”

Section: Introductionmentioning

confidence: 98%

“…N ICKEL fully silicided (Ni-FUSI) gate is an attractive metal gate candidate for replacing the conventional polycrystalline silicon (poly-Si) gate to enhance device performance in sub-45-nm CMOS technology nodes due to its simple process flow and tunable work function Φ m [1]- [6]. To meet the low threshold voltage requirement for potential CMOS applications, modulation of NiSi Φ m from its Si midgap value is highly desired.…”

Section: Introductionmentioning

confidence: 99%

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Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET

Lim

Lee

Wang

et al. 2007

IEEE Electron Device Lett.

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Novel yttrium-and terbium-based interlayers (Y IL and Tb IL , respectively) on SiO 2 and HfO 2 gate dielectrics were employed for NMOS work function Φ m modulation of undoped nickel fully silicided (Ni-FUSI) gate. Bandedge Ni-FUSI gate Φ m of ∼4.11 and ∼4.07 eV was obtained by insertion of ultrathin (∼1 nm) Y IL and Tb IL , respectively, on the SiO 2 gate dielectric in a gate-first process (with 1000 • C anneal). NiSi Φ m on SiO 2 could also be tuned between the Si midgap and the conduction bandedge E C by varying the interlayer thickness. The achievement of NiSi Φ m around 4.28 eV on the HfO 2 gate dielectric using interlayer insertion makes this an attractive Φ m modulation technique for Ni-FUSI gates on SiO 2 and high-k dielectrics.Index Terms-Interlayer, metal gate, nickel fully silicided (Ni-FUSI), terbium (Tb), work function modulation, yttrium (Y).

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Section: Resultsmentioning

confidence: 59%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Yttrium- and Terbium-Based Interlayer on $ \hbox{SiO}_{2}$ and $\hbox{HfO}_{2}$ Gate Dielectrics for Work Function Modulation of Nickel Fully Silicided Gate in nMOSFET

Lim

Lee

Wang

et al. 2007

IEEE Electron Device Lett.

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“…[266][267][268][269][270], alloyed metals [271][272][273], conductive metal oxides (RuO 2 , IrO 2 , etc.) [274,275], nitride alloyed metals [276][277][278], and alloyed FUSI [279][280][281]. Conductive oxides such as RuO 2 and IrO 2 , can provide high work function values in addition to affording the use of standard etching and processing techniques.…”

Section: Fundamental Limitationsmentioning

confidence: 98%

“…For example, work functions of 4.1 eV and 4.9 eV have been obtained by Yb and Ga pre-dopants, respectively [297]. By alloying with different elements, both high and low work function can be obtained, such as Pt or Ge for pMOS and Al for nMOS, respectively [280,319]. Moreover, FUSI alloy can achieve additional scalibilities as compared to other FUSI gate.…”

Section: Fully Silicided (Fusi) Gatesmentioning

confidence: 99%