Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Liu, Changze; Sagong, Hyun Chul; Kim, Hye-Jin; Choo, Seungjin; Lee, Hyun–Woo; Kim, Yoohwan; Kim, Hyun‐Jin; Jo, Bisung; Jin, Moo-Nyun; Kim, Jinjoo; Ha, Sang-Su; Pae, Sangwoo; Park, Jongwoo

doi:10.1109/irps.2015.7112693

Cited by 31 publications

(10 citation statements)

References 2 publications

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“…In our tests, no signature of TDDB was observed. This result is not surprising considering that in other accelerated test results on comparable technologies TDDB is only observed in voltages higher than 1.6 V [11]. The standard models for failure mechanisms in semiconductor devices are classified by JEDEC Solid State Technology Association and listed in publication JEP-122G [12].…”

Section: Separating Failure Mechanismsmentioning

confidence: 91%

Reliability prediction with MTOL

Bernstein¹,

Bensoussan²,

Bender³

2017

Microelectronics Reliability

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Here, we develop a comprehensive reliability prediction of FPGA devices from data motivated by physics of failure. The Multiple Temperature Operational Life (MTOL) testing method was used to calculate the failure in time (FIT) of 3 different mechanisms on both 45 nm and 28 nm technologies. We confirmed that there is significant hot carrier injection (HCI) at sub-zero temperatures in 45 nm technology. Surprisingly, we found that 28 nm exhibits no HCI degradation even with up to 1.6 V on the core. As a result, we show that there is no effect of frequency on the reliability. This means that at 28 nm and possibly smaller technologies, the devices can be de-rated or up-rated based only on the NBTI model and therefore reliability is dependent only on operating Voltage and Temperature with a single activation energy. Notably, the activation energies and voltage acceleration factors for both technologies are remarkably similar. This demonstration shows that, unlike other conventional qualification procedures, the MTOL testing procedure gives a broad description of the reliability from sub-zero to high temperatures. This procedure provides FIT prediction which can be applied to newer technologies, specifically 20 nm and 16 nm and beyond.

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Section: Separating Failure Mechanismsmentioning

confidence: 91%

Reliability prediction with MTOL

Bernstein¹,

Bensoussan²,

Bender³

2017

Microelectronics Reliability

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“…Many new field effect transistor (FET) structures have been extensively explored given that the metal oxide semiconductor FET (MOSFET) technology has continued to approach its downscaling limits. One of the relatively newer FETs is the FinFET as shown in Figure 1 [6], a transistor-structured FET that is a popular research topic in the academic field and semiconductor industry [7][8][9]. The one new promising MOSFET architecture is the FinFET see Figure 1 that have the gate surrounding the channel which gives a better control and therefore reduces current leaking, one way of creating a FinFET is to use a nanowire as a channel and build a gate around it.…”

Section: Introductionmentioning

confidence: 99%

Temperature characteristics of FinFET based on channel fin width and working voltage

Atalla

Hashim

Ghafar

et al. 2020

IJECE

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This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).

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“…Many new field-effect transistor (FET) structures have been extensively explored [1][2][3][4][5][6] because metal oxide semiconductor FET (MOSFET) technology is approaching its downscaling limits. One of the relatively new FETs is the fin field-effect transistor (FinFET) as shown Figure 1 [7], a transistor-structured FET that is a popular research subject in the academe and semiconductor industry [8][9][10]. The ideal example of sensors for subsumed electronic applications (i.e., used within equipment) is the semiconductor temperature sensor [11][12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

A temperature characterization of (Si-FinFET) based on channel oxide thickness

et al. 2019

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This paper presents the temperature-gate oxide thickness characteristics of a fin field-effect transistor (FinFET) and discusses the possibility of using such a transistor as a temperature nano-sensor. The investigation of channel oxide thickness-based temperature characteristics is useful to optimized electrical and temperature characteristics of FinFET. Current-voltage characteristics with different temperatures and gate oxide thickness values (Tox=1, 2, 3, 4, and 5 nm) are initially simulated, and the diode mode connection is considered to measure FinFET's temperature sensitivity. Finding the best temperature sensitivity of FinFET is based on the largest change in current (∆I) within a working voltage range of 0-5 V. According to the results, the temperature sensitivity of FinFET increases linearly with oxide thickness within the range of 1-5 nm, furthermore, the threshold voltage and drain-induced barrier lowering increase with increasing oxide thickness. Also, the subthreshold swing (SS) is close to the ideal value at the minimum oxide thickness (1 nm) then increases and diverges with increasing oxide thickness. So, the best oxide thickness (nearest SS value to the ideal one) of FinFET under the conditions described in this research is 1 nm.

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Systematical study of 14nm FinFET reliability: From device level stress to product HTOL

Cited by 31 publications

References 2 publications

Reliability prediction with MTOL

Reliability prediction with MTOL

Temperature characteristics of FinFET based on channel fin width and working voltage

A temperature characterization of (Si-FinFET) based on channel oxide thickness

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