T-shaped anode GaN Schottky barrier diode for microwave power rectification

Fukui, Kazuhito; Takeuchi, Taro; Hayashino, Kouhei; Harauchi, Kenji; Iwasaki, Yukiko; Ao, Jin‐Ping; Ohno, Yasuo

doi:10.1109/imws.2012.6215785

Cited by 3 publications

(2 citation statements)

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“…Furthermore, the breakdown voltage can be enhanced to about 90 V for the TiN diode fabricated on 1 µm thick drift layer with an impurity density of 1×10 17 cm −3 . It is also compatible with our reported result of the Ni diode which was fabricated on a wafer with a similar drift layer thickness and impurity density [8]. It is clear that the TiN diode has the similar breakdown voltage but a nearly half of the turn-on voltage comparing with the Ni diode, resulting in a reduction of the turn-on voltage to breakdown voltage ratio.…”

Section: Device Characterization and Discussionsupporting

confidence: 90%

“…As a wide bandgap semiconductor, gallium nitride (GaN) is regarded as a promising material compared with silicon and GaAs to realize high breakdown-voltage, low turn-on voltage to breakdown voltage ratio, and low-resistance devices [7]. However, the turn-on voltage of GaN SBD was about 0.8 V when a Ni electrode was adopted [8]. It is possible to reduce the turn-on voltage by using low work function metals [9], [10].…”

Section: Introductionmentioning

confidence: 99%

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GaN Schottky Barrier Diode With TiN Electrode for Microwave Rectification

Kishi

Liu

et al. 2014

IEEE J. Electron Devices Soc.

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GaN Schottky barrier diodes (SBDs) with low turn-on voltage are developed for microwave rectification. The diodes with reactively-sputtered TiN electrodes have a lower turn-on voltage compared with the diodes with Ni electrode, while the on-resistance, the reverse leakage current, and the reverse breakdown characteristics are comparable to each other. Theoretically, the SBDs with TiN electrodes can enhance the efficiency of a rectenna circuit at 2.45 GHz from 84% to 89% when the turn-on voltage decreases from 1.0 to 0.5 V.

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Section: Device Characterization and Discussionsupporting

confidence: 90%