Tailoring Electronic Transparency of Twin-Plane 1D Superlattices

Abstract

The structural properties of twin-plane superlattices in InP nanowires are systematically analyzed. First, we employ molecular dynamics simulations to determine the strain fields in nanowires grown in the [111] direction. These fields are produced by the formation of twin-planes and by surface effects. By using the stress tensor obtained from molecular dynamics simulations, we are able to describe changes on the electronic structure of these nanowires. On the basis of the resulting electronic structure, we confirm that a one-dimensional superlattice is indeed formed. Furthermore, we describe the transport properties of both electrons and holes in the twin-plane superlattices. In contrast to the predicted transparency of Γ-electrons in heterolayered III-V semiconductor superlattices, we verify that surface effects in 1D systems open up possibilities of electronic structure engineering and the modulation of their transport and optical responses.

Inducing imperfections in germanium nanowires

“…[18][19][20] In recent years, a remarkable degree of control of 4 twinning and polytype generation has been demonstrated in III-V nanowires with the formation of twinning superlattices. [21,22] However, the intentional induction and control of twin boundaries and polytypes in group IV semiconductor nanowires (Si and Ge) are an ongoing challenge, although for group IV semiconductors the influence of twin boundaries on the electronic band structure of Si and Ge is well documented.…”

“…[23] Explorations of altered phonon transport through twin defects and hence a change in thermal conductivity and thermoelectric properties, has also made defect-engineering of nanostructures appealing. [19], [24], [25], [26] Additionally, the incorporation of a non-equilibrium amount of impurities in semiconductor nanowires is attracting enormous research interest recently as the impurity induction could substantially alter the basic properties of semiconductors which are critical for emerging nanometre scale technologies. Colossal incorporation of foreign atoms in the host semiconductor lattice allows new or added functionalities (strain engineering, controlled defect formation, band structure modulation etc.)…”

Probability of twin formation on self-catalyzed GaAs nanowires on Si substrate

“…Therefore, we could improve the comprehension of the growth mechanism in the self-catalyzed GaAs NWs. This comprehension might support a technological feasibility of a novel device like twin-plane 1D superlattices [21]. …”

Hydrazine-Assisted Formation of Indium Phosphide (InP)-Based Nanowires and Core-Shell Composites

“…This morphology attracted considerable interest for device applications due to unique structural and optical properties, e.g., shifts of PL emissions [49,50]. However, preceding routes to such zigzag NWs require the presence of ZnSe as a promoter and higher formation temperatures of 1200 °C in quartz tubes.…”