Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering

Shin, Ki Soon; Sahu, Bibhuti Bhusan; Kumar, Manish; Leksakul, Komgrit; Han, Jeon G.

doi:10.1088/0022-3727/48/47/475303

Cited by 19 publications

(17 citation statements)

References 32 publications

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“…The relevant portions of the individual components are then evaluated. 31,39 The fraction X C is determined as X C = (I 2 + I 3 )/(I 1 + I 2 + I 3 ). Additionally, the ultra-nanocrystalline volume fraction (X nc ) is calculated from X nc = I 2 /(I 1 + I 2 + I 3 ).…”

Section: Resultsmentioning

confidence: 99%

“…The component sited in the range of ∼495−510 cm −1 is commonly considered as the grain boundary. 31,39 Here, it is considered as the fraction X nc with the signature of tiny crystallites with sizes much less than a nm surrounded by the grain boundaries. Figure 4c presents the overall crystallinity of the films prepared at various pressures.…”

Section: Resultsmentioning

confidence: 99%

“…It can be seen from Figure 4c,d indication that the smaller the value of X nc , the smaller the value of QD size. Additionally, we use the well-known Scherrer equation 39 relevant to the ⟨220⟩ crystal plane to determine the nano grain (QD) sizes, which are also shown together in Figure 4d. It is evident that the overall trend of the grain size has a very similar and close variation to that of QD size estimated from Raman data.…”

Section: Resultsmentioning

confidence: 99%

“…This feature indicates that there is a significant change in the microstructure and the crystallinity of this film as compared to others prepared at a low pressure. To investigate further, the crystalline volume fraction ( X C ) of the films is determined using the method of deconvolution. , Figure b presents a typical deconvolution of a Raman spectrum into three Gaussian components to determine the qualitative information, for the films prepared at 20 mTorr. These Gaussian peaks, as shown in Figure b, are, respectively, considered at ∼515–520, ∼510, and 480 cm –1 corresponding to the nc-Si, the ultra-nanocrystalline, and the amorphous (a-Si) components.…”

Section: Results and Discussionmentioning

confidence: 99%

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Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

2017

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Control of plasma and radical generation and associated energy deposition near the growing thin films are still the main challenges in materials fabrication in the plasma-assisted deposition of Si quantum dot (QD) thin film. To control and enhance the material’s performance concerning film properties and application durability, we prepare 2.6 nm sized Si QDs with a fully ordered structure and entrapped them in amorphous silicon nitride using advanced dual frequency capacitively coupled plasmas. Raman and XRD analyses consistent with the high-resolution transmission electron micrographs reveal that the QD size can be controlled and altered from ∼2.6 to 4.0 nm simply by changing the operating pressure, which affects the film’s crystallinity in a broad range from 60% to 72% and the resulting microstructure. Further, a broad visible range ∼ 1.8–3.0 eV photoluminescence, with intense intensity and narrow to broad widths, is observed from Si QDs films. It is also seen that the observed photoluminescence featured is due to the quantum confinement effect within the QD material. Data reveal that the film properties are controllable by modifying a change in the plasma properties and radical parameters. The radio frequency and ultrahigh frequency dual frequency plasmas at low operating pressures have produced a very high atomic density of H and N radicals and a very high plasma density at low electron temperature, which are critically necessary and favorable to the control of film growth, nucleation, and other film properties. It is also seen that the deposition energy plays a significant role for the resulting microstructure and the QD size. The high luminescent yields in the visible range with a PL lifetime of ∼0.75 ns and size-tunable low-temperature deposition with plasma and radical control enable these QD materials as a good candidate for light emitting applications. Additionally, a plausible mechanism is foreseen for the QD film formation.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

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Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

2017

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“…Conversely, the nucleation center of Ge islands is limited on the microcrystalline Si buffer. The crystalline volume fraction (X c ) of microcrystalline Si buffer layer was estimated from X c =I c /(I c +I a ) [34], where I c and I a were integrated intensities of the crystalline and amorphous Raman peaks respectively. Compared with the Raman spectra of the island samples grown at different grid-to-grid gaps, the island can be observed when the volume fraction of microcrystalline buffer with about 50 nm thickness is higher than 72 %.…”

Section: Resultsmentioning

confidence: 99%

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

Yang

Zhao

Wang

et al. 2016

Applied Surface Science

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Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are

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Influence of excitation frequency and electrode separation on the growth of microcrystalline silicon films and their application in single junction microcrystalline solar cell

Das

Mandal

Dhar

et al. 2017

J Mater Sci: Mater Electron

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Tailoring of microstructure in hydrogenated nanocrystalline Si thin films by ICP-assisted RF magnetron sputtering

Cited by 19 publications

References 32 publications

Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

Controlled Growth, Microstructure, and Properties of Functional Si Quantum Dot Films via Plasma Chemistry and Activated Radicals

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

Influence of excitation frequency and electrode separation on the growth of microcrystalline silicon films and their application in single junction microcrystalline solar cell

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