TECHNOLOGICAL ASPECTS OBTAINING OF THE THERMOELECTRIC PbTe

Thermodynamic Analysis of the Defective Subsystem of Lead Telluride Crystals with Impurity of Oxygen

“…The method for measuring electrophysical parameters and the Hall effect is described in detail in [9].…”

Scattering Mechanisms in pressed PbTe

“…In articles [6][7], PbTe samples were obtained by cold pressing at 2 GPa. It is shown that the samples obtained at room temperatures are characterized by a ptype of conductivity, which changes with n-type with increasing temperature due to the manifestation of its own conductivity with the predominance of the electronic component.…”

“…It has been established that annealing of the samples at 500 °C leads to recrystallization of the samples, which causes, in particular, an increase in their specific electrical conductivity. It should be noted that the parameter of the elementary cell of the material changes during the operations within the error, as well as the Hall concentration of carriers [6]. Thus, it can be assumed that the defective subsystem of samples does not change during technological operations, and the modification of thermoelectric parameters is caused only by recrystallization of grains.…”

“…The analysis of the obtained experimental dependences [6] was performed in [7]. In particular, it is shown that scattering on acoustic phonons is decisive in the formation of kinetic properties of current carriers (heavy holes) in the samples at temperatures up to 200 °C.…”

“…The purpose of this work is a consistent theoretical analysis of the temperature dependences of the specific electrical conductivity and the Seebeck coefficient for the samples described in [6,7] and new ones obtained under other technological conditions.…”