Temperature- and doping-concentration-dependent characteristics of junctionless gate-all-around polycrystalline-silicon thin-film transistors

Abstract

The temperature effects of both gate-all-around polycrystalline silicon nanowire (GAA poly-Si NW) junctionless (JL) and inversion mode (IM) transistor devices at various temperatures (77-410 K) were investigated. The electrical characteristics of these devices, such as subthreshold swing (SS), threshold voltage (V th ), and drain-induced barrier lowering (DIBL), were also characterized and compared in this study. Moreover, JL devices with different doping concentrations at various temperatures were also discussed. Both V th and I on showed significant doping concentration dependences for JL devices with doping concentrations of 1 ' 10 19 and 5 ' 10 19 cm %3 . However, the electrical characteristics of JL devices showed less thermal sensitivity when the doping concentration reached 10 20 cm %3 .