Temperature-and thickness -dependent dynamic magnetic properties of sputtered CoFeB/Ta bilayer films

Temperature and Thickness Dependence of Statistical Fluctuations of the Gilbert Damping in Co - Fe - BSampan-a-pai1, Chureemart2, Chantrell3 et al. 2019Phys. Rev. Applied124110View full textAdd to dashboardCite

“…4(a). For each thickness, we find that temperature has a weak influence on the mean effective damping parameter and that it is essentially constant in the temperature range 0-400 K. This observation is consistent with experimental studies [33,34]. From our statistical samples of the relaxation dynamics, we fit a Gaussian distribution to determine the scatter in the effective damping parameter.…”

Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy

“…(i) It is not present in those CoFeB similarly grown on Pt buffer layer (see Figure S1). Moreover, the eas y -axis redirection arises at the 3 nm thick CoFeB, suggesting the critical FM thickness ( t cr ) for achieving PMA in CoFeB/2D MoSe 2 is ≥3 nm, more than double the values in common systems such as CoFeB/MgO and CoFeB/Ta (≤1.5 nm). − Here, t cr is defined as t cr = −2 K i / K b (where K i is the interface contribution and K b is the bulk contribution to the effective magnetic anisotropy energy), above which the PMA will disappear. Hence, the large t cr suggests large interface anisotropy energy and allows for the PMA development in a broad thickness range of CoFeB grown on epitaxial MoSe 2 .…”

Impact of Ferromagnetic Layer Thickness on the Spin Pumping in Co60Fe20B20/Ta Bilayer Thin Films

“…1(e). The values of α is found to be enhanced in CFB (4nm), which is expected due to the enhanced in surface scattering contribution at lower CFB thickness [36] [37] . It is seen that the values of α do not change beyond the 8 nm thickness of CFB thin film grown over Si substrates.…”