Temperature and Voltage Dependent RF Degradation Study in Algan/gan HEMTs

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

“…This current is caused by the large voltage swing on gate that turns the gate-source Schottky junction on. These operating conditions corresponding to a compressed mode allow an accelerated RF life test under high electric field [14,15]. During the test, only RF signal is pulsed, while gate and drain voltages are kept constant.…”

Thermal Resistance of GaN / AlN Graded Interfaces

“…The mean-time-to-failure (MTF) of a device is affected by different mechanisms, and its temperature dependence depends on the particular device in hand [32][33][34][35] . Common temperature dependences of GaN device MTFs follow exponential behaviors, and may decrease by one order of magnitude for every ∼50 • C increase in the temperature of the active region.…”

Reliability of GaN-Based HEMT devices

“…A subtler concern is this: lifetesting in most instances involves applying both high temperature and bias to the devices under test, sometimesGaN-based HEMTs in particular being still mysterious in some respects-without the faintest notion of how temperature and bias conditions may interact. A rather extreme caveat is offered by [14], where AlGaN/GaN HEMT degradation during RF stress is shown to decelerate with increasing temperature-a typical signature of hot-carrier degradation in most devices. Other investigators reported on a substantial independence of HEMT degradation on lifetesting temperature during 3000 h lifetests under different bias conditions [15].…”