Temperature change induced degradation of SiC MOSFET devices

Sárkány, Zoltán; He, Weikun; Rencz, M.

doi:10.1109/itherm.2016.7517736

Cited by 14 publications

(5 citation statements)

References 5 publications

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“…The degraded SiC MOSFETs were inspected with non‐destructive analysis methods using the Scanning Acoustic Microscopy to detect internal defects such as voids, cracks, and delamination. Huge delamination was detected at the mould compound to the heat sink interface and also verified the increased thermal impedance [25]. Furthermore, the cross‐section image of the degraded SiC MOSFETs also showed a small crack was forming up at the tail of the bond wire attach, but no significant damage on the bond wire itself [25].…”

Section: Reliability Of Sic Mosfetsmentioning

confidence: 85%

“…SiC MOSFETs show a significant degradation on threshold voltage, drain leakage current, and on-state resistance due to charge tunnelling into the gate oxide under repetitive SC stress, avalanche stress, and surge current stress [22][23][24]. The SiC MOSFET's package reliability was also investigated by power cycling test (PCT) and temperature cycling test in [25][26][27]. Despite these publications on various aspects of ruggedness and reliability of SiC MOSFETs under harsh conditions, there is not yet a survey or review paper available that comprehensively addresses the academic and industrial need to treat this important subject.…”

Section: Introductionmentioning

confidence: 99%

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Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

115

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SiC MOSFETs (silicon carbide metal-oxide semiconductor field-effect transistors) are replacing Si insulated gate bipolar transistors in many power conversion applications due to their superior performance. However, ruggedness and reliability of SiC MOSFETs are still big concern for their widespread applications in the market, especially in safety-critical applications. The objective of this study is to provide a comprehensive picture on the ruggedness and reliability of commercial SiC MOSFETs, discover their failure or degradation mechanism, and propose some possible mitigation methods through both literature survey and in-depth analysis. The ruggedness of SiC MOSFETs discussed here includes short-circuit (SC) ruggedness, avalanche ruggedness, and their failure mechanism. The reliability issues include gate oxide reliability, degradation under high-temperature bias stress, repetitive SC stress, avalanche stress, power cycling stress, body diode's surge current stress, and their degradation mechanism. Furthermore, this study discusses methods and solutions to improve their ruggedness and reliability.

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Section: Reliability Of Sic Mosfetsmentioning

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang

Jiang

2020

IET Power Electronics

115

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“…Therefore, CM methods based on V CE-on can accurately predict BWLO only if the estimated T j is verified in healthy mode from at least one other method which is not oriented to BWLO. An alternative method is based on an in-situ circuit connected to the power converter that measures both I C and V CE-on in real time, as proposed in [33,34]. The two measurements give the power losses that are used to estimate the temperature T j and, hence, infer the health condition of the bond wires.…”

Section: Methods To Detect Bwlomentioning

confidence: 99%

Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review

Moeini

Tricoli

Hemida

et al. 2017

IET Renewable Power Generation

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“…The dynamic load change of the DC/DC converter can affect the temperature change profile of the semiconductors. Continuous temperature changes of the semiconductors can shorten the lifetime of the semiconductors [40][41][42].…”

Section: Dc/dc Convertermentioning

confidence: 99%

Supercapacitor-Based Energy Storage in Elevators to Improve Energy Efficiency of Buildings

2022

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Improving energy efficiency is the most important goal for buildings today. One of the ways to increase energy efficiency is to use the regenerative potential of elevators. Due to the special requirements of elevator drives, energy storage systems based on supercapacitors are the most suitable for storing regenerative energy. This paper proposes an energy storage system consisting of a supercapacitor bank and a bidirectional six-phase interleaved DC/DC converter. The energy savings achieved by the proposed system were investigated through simulation tests. The proposed system was modeled considering all physical constraints. A simulation model of the existing faculty elevator system was created in PLECS and verified with field measurements. Reliable results were ensured by using the verified simulation model and considering all physical constraints. The operation of the proposed energy storage system was tested under various conditions. In addition, the simulation model of the elevator system with the proposed energy storage system was tested using the elevator traffic data obtained from the measurements. The simulation results show the effectiveness of the proposed energy storage system and that significant energy savings can be achieved.

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Temperature change induced degradation of SiC MOSFET devices

Cited by 14 publications

References 5 publications

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Review and analysis of SiC MOSFETs’ ruggedness and reliability

Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review

Supercapacitor-Based Energy Storage in Elevators to Improve Energy Efficiency of Buildings

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