Review and analysis of SiC MOSFETs’ ruggedness and reliability

Wang, Daming; Jiang, Xi

doi:10.1049/iet-pel.2019.0587

Cited by 112 publications

(34 citation statements)

References 83 publications

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“…The degradation of the oxide layer is also a major issue regarding the reliability of SiC MOSFETs as the device has a thin layer of oxide [212]. The oxide layer of the SiC MOSFET is small when compared with the Si MOSFET when trying to achieve a reasonable value of threshold voltage and transconductance [213,214].…”

Section: Gate Oxide Degradationmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage, higher thermal conductivity, higher operating frequency, higher operating temperature, and higher saturation drift velocity, SiC has attracted much attention from researchers and the industry for decades. With the advances in material science and processing technology, many power applications such as new smart energy vehicles, power converters, inverters, and power supplies are being realized using SiC power devices. In particular, SiC MOSFETs are generally chosen to be used as a power device due to their ability to achieve lower on-resistance, reduced switching losses, and high switching speeds than the silicon counterpart and have been commercialized extensively in recent years. A general review of the critical processing steps for manufacturing SiC MOSFETs, types of SiC MOSFETs, and power applications based on SiC power devices are covered in this paper. Additionally, the reliability issues of SiC power MOSFET are also briefly summarized.

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Section: Gate Oxide Degradationmentioning

confidence: 99%

Review of Silicon Carbide Processing for Power MOSFET

et al. 2022

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“…Over the last decade, we have assisted to the rapid development of industrial applications of microelectronic devices based on new semiconducting materials, such as Silicon Carbide (SiC) and Gallium Nitride (GaN). Power electronic applications, in particular, have taken huge advantages from the adoption of these wide bandgap semiconductors, both of which allow the effective fabrication of high breakdown voltage, low on-resistance, diodes and transistors 1,2,3,4 , capable moreover of operating at much higher temperatures compared to Silicon (Si) ones 5,6 . As the deployment of these materials in electronics is destined to grow in the coming years 7 , it can be expected that this will trigger the development of passive and active photonic devices for communication or sensing purposes, possibly monolithically integrated within the same chip 8,9,10 .…”

Section: Introductionmentioning

confidence: 99%

Temperature Dependence of The Thermo-Optic Coefficient In 4H-SiC and GaN Slabs At The Wavelength of 1550 nm

Rao

Mallemace

Cocorullo

et al. 2022

Preprint

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The refractive index and its variation with temperature, i.e. the thermo-optic coefficient, are basic optical parameters for all those semiconductors that are used in the fabrication of linear and non-linear opto-electronic devices and systems. Recently, 4H single-crystal Silicon Carbide (4H-SiC) and Gallium Nitride (GaN) have emerged as excellent building materials for high power and high temperature electronics, and wide parallel applications in photonics can be consequently forecasted in the near future, in particular in the infrared telecommunication band of λ=1500-1600 nm.In this paper, the thermo-optic coefficient (dn/dT) is experimentally measured in 4H-SiC and GaN substrates, from room temperature to 480 K, at the wavelength of 1550 nm. Specifically, the substrates, forming natural Fabry-Perot etalons, are exploited within a simple hybrid fiber–free space optical interferometric system to take accurate measurements of the transmitted optical power in the said temperature range. It is found that, for both semiconductors, dn/dT is itself remarkably temperature dependent, in particular quadratically for GaN and almost linearly for 4H-SiC.

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“…It has also been proven in [6] that the SC withstand time (SCWT) of SiC MOSFET is much shorter than that of silicon (Si) insulated-gate bipolar transistor (IGBT). Thus, the reliability issue, especially under the extreme condition of SC fault, has become one of the obstacles for its replacement of Si IGBT in various industrial applications [7].…”

Section: Introductionmentioning

confidence: 99%

A digital‐controlled gate charge detection circuit for short‐circuit protection and condition monitoring of SiC MOSFET

Yin

Liu

Xiong

et al. 2022

IET Power Electronics

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The safe and reliable operation of power converter requires a protection circuit with fast response when the power device is subjected to the short‐circuit (SC) fault. In addition, the on‐line condition monitoring circuit is beneficial to provide a suggestion for the replacement of aged device. The silicon carbide (SiC) power devices promise the higher power density in the system performance, but is still limited by the poor SC reliability issue. Thus, it is crucial to improve the robustness of SiC‐based power converter from the circuit design. This work proposes a novel gate charge detection circuit for SiC devices. It achieves a high‐speed SC protection against hard switching fault (HSF) based on the difference of Miller capacitance between normal condition and SC fault. Meanwhile, the condition monitoring is achieved based on the high gate leakage current of aged device. A high‐precision analog amplifier circuit is designed to acquire the gate signal. The normal/fault signal is distinguished and the protection is triggered using a digital‐controlled method to reduce the hardware cost. A 600‐ns SC response time is achieved, and the monitoring circuit can differentiate the aged device from the healthy one.

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Review and analysis of SiC MOSFETs’ ruggedness and reliability

Cited by 112 publications

References 83 publications

Review of Silicon Carbide Processing for Power MOSFET

Review of Silicon Carbide Processing for Power MOSFET

Temperature Dependence of The Thermo-Optic Coefficient In 4H-SiC and GaN Slabs At The Wavelength of 1550 nm

A digital‐controlled gate charge detection circuit for short‐circuit protection and condition monitoring of SiC MOSFET

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