Temperature coefficient of frequency modeling for CMOS-MEMS bulk mode composite resonators

Wang, Siping; Bahr, Bichoy; Li, Sheng-Shian

doi:10.1109/tuffc.2014.006724

Cited by 8 publications

(2 citation statements)

References 30 publications

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“…A proof of the hermiticity ofÂ is found in [27]. The solutions of (6) form a complete and orthogonal set of bases for a Hilbert space H over C, with the inner product μ|ν B defined as:…”

Section: A Phononic Crystal Theorymentioning

confidence: 99%

Theory and Design of Phononic Crystals for Unreleased CMOS-MEMS Resonant Body Transistors

Bahr

Marathe

Weinstein

2015

J. Microelectromech. Syst.

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Resonant body transistors (RBTs) are solid state, actively sensed microelectromechanical systems (MEMS) resonators that can be implemented in commercial CMOS technologies. With small footprint, high-Q, and scalability to gigahertz frequencies, they form basic building blocks for radio frequency (RF) front-ends and timing applications. Toward the goal of seamless CMOS integration, this paper presents the design and implementation of phononic crystals (PnCs) in the back-end-ofline (BEOL) of commercial CMOS technologies with bandgaps in the gigahertz frequencies to be used for enhanced acoustical confinement in CMOS-RBTs. Lithographically defined PnC dimensions allow for bandgap engineering, providing flexibility in resonator design, and allowing for multiple frequencies on a single chip. The theoretical basis for analyzing generic PnCs is presented, with focus on the special case of implementing PnCs in CMOS BEOL layers. The effect of CMOS process variations on the performance of such PnCs is also considered. The analysis presented in this paper establishes a methodology for assessing different CMOS technologies for the integration of unreleased CMOS-MEMS resonators. This paper also discusses the importance of uniformity of the acoustical cavity in the nonresonant dimension and its effect on overall resonator performance. A PnC implementation in IBM 32-nm silicon on insulator (SOI) BEOL layers is demonstrated to achieve 85% fractional-bandgap ∼4.5-GHz frequency. With better energy confinement, the proposed CMOS-RBTs achieve a quality factor Q of 252, which corresponds to 8× improvement over the previous generation RBTs, which did not include PnCs. The presented devices have a footprint of 5 μm × 7 μm. This paper concludes with a discussion of the properties required of a CMOS technology for high performance RBT implementation.[2014-0364] IndexTerms-CMOS-microelectromechanical systems (MEMS), radio frequenty (RF) MEMS, resonators, resonant body transistor (RBT), phononic crystals.

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“…A proof of the hermiticity ofÂ is found in [27]. The solutions of (6) form a complete and orthogonal set of bases for a Hilbert space H over C, with the inner product μ|ν B defined as:…”

Section: A Phononic Crystal Theorymentioning

confidence: 99%

Theory and Design of Phononic Crystals for Unreleased CMOS-MEMS Resonant Body Transistors

Bahr

Marathe

Weinstein

2015

J. Microelectromech. Syst.

Self Cite

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“…Moreover, the output signal frequency of the resonant sensor is considered to be relatively immune to noise and interference [49]. However, they still inevitably suffer from environmental influences [50,51] and cannot satisfy the high-sensitivity requirement of future high-end markets such as ultra-small mass sensors [45] and ultra-low accelerometers [52]. It is fortunate that dual-resonatorbased (DRB) and multiple-resonator-based (MRB) MEMS sensors have become an effective way to solve such issues due to their ability of sensitivity enhancement and rejection of environmental influences.…”

Section: Introductionmentioning

confidence: 99%

Dual-Resonator-Based (DRB) and Multiple-Resonator-Based (MRB) MEMS Sensors: A Review

et al. 2021

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Single-resonator-based (SRB) sensors have thrived in many sensing applications. However, they cannot meet the high-sensitivity requirement of future high-end markets such as ultra-small mass sensors and ultra-low accelerometers, and are vulnerable to environmental influences. It is fortunate that the integration of dual or multiple resonators into a sensor has become an effective way to solve such issues. Studies have shown that dual-resonator-based (DRB) and multiple-resonator-based (MRB) MEMS sensors have the ability to reject environmental influences, and their sensitivity is tens or hundreds of times that of SRB sensors. Hence, it is worth understanding the state-of-the-art technology behind DRB and MRB MEMS sensors to promote their application in future high-end markets.

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MEMS Using CMOS Wafer

Fang

Chiu

et al. 2021

3D and Circuit Integration of MEMS

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Temperature coefficient of frequency modeling for CMOS-MEMS bulk mode composite resonators

Cited by 8 publications

References 30 publications

Theory and Design of Phononic Crystals for Unreleased CMOS-MEMS Resonant Body Transistors

Theory and Design of Phononic Crystals for Unreleased CMOS-MEMS Resonant Body Transistors

Dual-Resonator-Based (DRB) and Multiple-Resonator-Based (MRB) MEMS Sensors: A Review

MEMS Using CMOS Wafer

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