Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Kim, Choong‐Ki; Ahn, Hyun Jun; Moon, Jung Min; Lee, Sung‐Hee; Moon, Dong-II; Park, Jeong‐Soo; Choi, Yang‐Kyu; Lee, Seok-Hee

doi:10.1016/j.sse.2015.07.011

Cited by 16 publications

(11 citation statements)

References 10 publications

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“…PEALD of TaC y using organic precursor and a carbon containing gas has an effective workfunction value of 4.77–4.54 eV [ 150 ]. Most of the other N type metals, TiC, TaCN, and WC 0.4 , etc., are also deposited by PEALD [ 151 , 152 , 153 ]. Compared with PEALD, thermal ALD has no plasma damage on the underlayer dielectric and could improve the device performance.…”

Section: Ald Hkmg and Nc Materialsmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.

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Section: Ald Hkmg and Nc Materialsmentioning

confidence: 99%

State of the Art and Future Perspectives in Advanced CMOS Technology

et al. 2020

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“…However, for NMOSFET, it is relatively difficult to acquire the N-type work function metal due to the precursor limitation. In this field, TaC y [82], TaCN [83], TiC [84], WC 0.4 [85], and ErC 2 [86] were studied for NMOSFET application. However, in most of these processes, plasma enhanced ALD (or PEALD) was used.…”

Section: High-k and Metal Gate (Hkmg)mentioning

confidence: 99%

“…The deposition of TaAlC films using TMA and TEA has almost the same effective work function as TiAlC films grown by TMA and TEA separately, which provide more choices for metal gate selection [90,91]. The effective work function of different metals for NMOSFET are summarized in Table 2 [82,83,84,85,86,87,88,89,90,91].…”

Section: High-k and Metal Gate (Hkmg)mentioning

confidence: 99%

Miniaturization of CMOS

Radamson

Zhang

et al. 2019

Micromachines

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When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.

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“…Therefore, there has been a considerable interest in finding advanced gate metals of desirable work functions [10]. Among others, TiC [11], TiAlC [12], and Ru [13] are heavily investigated as potential future materials.…”

Section: Introductionmentioning

confidence: 99%

Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

2018

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Semiconductor device dimensions have been decreasing steadily over the past several decades, generating the need to overcome fundamental limitations of both the materials they are made of and the fabrication techniques used to build them. Modern metal gates are no longer a simple polysilicon layer, but rather consist of a stack of several different materials, often requiring multiple processing steps each, to obtain the characteristics needed for stable operation. In order to better understand the underlying mechanics and predict the potential of new methods and materials, technology computer aided design has become increasingly important. This review will discuss the fundamental methods, used to describe expected topology changes, and their respective benefits and limitations. In particular, common techniques used for effective modeling of the transport of molecular entities using numerical particle ray tracing in the feature scale region will be reviewed, taking into account the limitations they impose on chemical modeling. The modeling of surface chemistries and recent advances therein, which have enabled the identification of dominant etch mechanisms and the development of sophisticated chemical models, is further presented. Finally, recent advances in the modeling of gate stack pattering using advanced geometries in the feature scale are discussed, taking note of the underlying methods and their limitations, which still need to be overcome and are actively investigated.

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Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition

Cited by 16 publications

References 10 publications

State of the Art and Future Perspectives in Advanced CMOS Technology

State of the Art and Future Perspectives in Advanced CMOS Technology

Miniaturization of CMOS

Modeling of Gate Stack Patterning for Advanced Technology Nodes: A Review

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