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A germanium tunnel field-effect transistor (TFET) with a bias-induced electron-hole bilayer (EHB) with double gates that are symmetrically arranged and independently biased is simulated. The symmetric double gate scheme is feasible, presenting a simple EHB-TFET structure that is practicable for industrial fabrication. According to simulation results, the improvement of on/off current ratio of ∼10 8 is achieved by inserting a lightly-doped drain-source (LDD) region. Also, fin-type EHB-TFETs show an extremely low average sub-threshold swing of 11 mV/decade over 4 decades at V DD = 0.5 V, and thus are suitable for ultra-low power applications.

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