Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

Kumar, Sandeep; Katharria, Y. S.; Kumar, S.; Kanjilal, D.

doi:10.1016/j.sse.2006.09.004

Cited by 18 publications

(7 citation statements)

References 11 publications

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“…The role of electronic energy loss in modification of interface states has been envisaged in relation to the immunity of SBH over a wide fluence range [87]. Another study of the electrical behaviour of Au/n-Si (100) structure, irradiated with 120 MeV 107 Ag 8+ , has been investigated in a wide temperature range 50-300 K by Kumar et al [543][544][545]. The forward bias I-V and reverse bias C -V measurements have been used to extract the diode parameters.…”

Section: Au/si and Ag/simentioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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Section: Au/si and Ag/simentioning

confidence: 99%

Ion beam induced surface and interface engineering

Jain

Agarwal

2011

Surface Science Reports

261

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“…When any radiation such as gamma radiation as well as electron, neutron, proton and alpha particle with energies in the range of 1 keV to hundreds of MeV passes through the semiconductor device different effects may occur [10,11]. High energy radiation penetrates into the MS interface and causes damage deep below the interface.…”

Section: Introductionmentioning

confidence: 99%

Gamma irradiation-induced changes at the electrical characteristics of organic-based schottky structures

Güllü

Çankaya

Bı̇ber

et al. 2008

J. Phys. D: Appl. Phys.

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We have studied electrical parameters of an Al/methyl violet/p-Si Schottky device by using current–voltage and capacitance–voltage–frequency measurements under γ irradiation at room temperature. Experimental results have shown that γ radiation gives rise to an increase in the barrier height, the ideality factor and the interfacial state density, while the series resistance decreases by applied radiation.

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“…The formation of interfacial oxide layer can be attributed to a number of factors: (i) the front side of p-Si is exposed to air prior to the deposition of N-BuHHPDI thin film, (ii) the water vapors are adsorbed on the p-Si surface before coating the active material, (iii) surface preparation, (iv) thermal evaporation and/or (v) post-deposition thermal annealing process [46]. The barrier height also depends on the electric field across the contacts and applied bias voltage [47].…”

Section: Resultsmentioning

confidence: 99%

“…In region-I, at low voltages, the ohmic conduction is dominant where the slope of the line segment is nearly equal to one. In this region, low bias voltage limits the injection of charge carriers from electrodes to the semiconductor material [47]. It is observed that the traps present in the N-BuHHPDI play critical role in the transition from the ohmic current region to the SCLC region.…”

Section: Resultsmentioning

confidence: 99%