Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures

Colocci, M.; Gurioli, Massimo; Vinattieri, A.; Fermi, F.; Deparis, C.; Massies, J.; Neu, G.

doi:10.1209/0295-5075/12/5/007

Cited by 51 publications

(15 citation statements)

References 23 publications

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“…- Figure 6 shows the power dependence of the spectra integrated from 100 to 600 ps of the 3 nm GaAs QW at a low temperature of 10 K. At low power this localized exciton luminescence has a lifetime of the order of 120 ps in agreement with other experiments [26] and with theory [10]. The 3 nm GaAs well.…”

Section: -Experimental Resultssupporting

confidence: 82%

Radiative lifetime of resonantly excited excitons in quantum dots

1995

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We report on the intrinsic radiative lifetime of excitons in InP quantum dots embedded in an In0.4s Gao.52 P matrix. This lifetime is about 400 ps as measured by time-resolved photoluminescence with resonant excitation of the ground states. It is independent of excitation density and temperature demonstrating the quantum dot nature of the InP islands and the strong localization of the excitons. Similar experiments on excitons localized by well width fluctuations in a GaAs quantum well reveal distinct differences: weakly localized excitons disappear with increasing density or temperature.PACS 68.55.Bd -Molecular and atomic beam epitaxy. PACS 71.50 -Localized single-particle electronic states (excluding impurities). PACS 73.20.Dx -Electron states in low-dimensional structures (including quantum wells, superlattices, layer structures, and intercalation compounds). PACS 78.55.Cr -III-V compounds and systems. PACS 01.30.Cc -Conference proceedings.

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Section: -Experimental Resultssupporting

confidence: 82%

Radiative lifetime of resonantly excited excitons in quantum dots

1995

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“…The effects of temperature or thermalization on the radiative lifetime of Xs have been extensively studied [99,[140][141][142]67,143,144,138]. The thermal equilibrium distribution of X states with different in-plane momenta produces an average decay time (τ) of the X population given by:…”

Section: Temperature Dependencementioning

confidence: 99%

Spatially indirect excitons in coupled quantum wells

Lai¹

2004

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“…28,29 Indeed, in case of high exciton densities or temperature the excitons are expected to form a statistical distribution over the available states similar to the one present for the nonresonantly excited excitons, already extensively studied. In the limit of high density or temperature the excitons produce a Boltzmann distribution which no longer reflects the specific initial excitation conditions.…”

Section: ͑7͒mentioning

confidence: 99%

Transport of superradiant excitons in GaAs single quantum wells

et al. 1997

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The dynamics of resonantly excited 1s-HH excitons in GaAs single quantum wells is studied by picosecond transient reflection and photon echo. The energy relaxation and transport properties of the excitons are probed, making use of the surface electric field. At low exciton densities and 5 K, transport appears to be absent, and superradiant decay takes the place of free excitons with characteristic times ranging from 5 to 13 ps, depending on the well width. The polarization decay is governed by energy relaxation, and a coherence length is found for these free excitons of ϳ200 nm. Low in the exciton resonance, we measure a much slower radiative decay and smaller coherence lengths, due to localization. Here both radiative decay and pure dephasing contribute to the polarization dephasing rate. At higher exciton densities and temperature, transport is observed, induced by exciton-exciton and exciton-phonon collisions. For free excitons it is demonstrated that the increased polarization dephasing rate is exclusively due to exciton transport, and not to pure dephasing. For localized excitons, pure dephasing processes prevail in T 2 , and thermally activated transport is found. ͓S0163-1829͑97͒05847-5͔

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Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well Structures

Cited by 51 publications

References 23 publications

Radiative lifetime of resonantly excited excitons in quantum dots

Radiative lifetime of resonantly excited excitons in quantum dots

Spatially indirect excitons in coupled quantum wells

Transport of superradiant excitons in GaAs single quantum wells

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